Inventor
HA TAE-HONG
KR36 patents
⚠️ This page may combine multiple inventors who share the name “HA TAE-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
25 patentsUS9677172B2Jun 13, 2017
Methods for forming a cobalt-ruthenium liner layer for interconnect structures
APPLIED MATERIALS INC8 citations83
US12211743B2Jan 28, 2025
Method of forming a metal liner for interconnect structures
APPLIED MATERIALS INC3 citations73
US11764157B2Sep 19, 2023
Ruthenium liner and cap for back-end-of-line applications
APPLIED MATERIALS INC2 citations73
US10002834B2Jun 19, 2018
Method and apparatus for protecting metal interconnect from halogen based precursors
APPLIED MATERIALS INC3 citations73
US11562909B2Jan 24, 2023
Directional selective junction clean with field polymer protections
APPLIED MATERIALS INC2 citations72
US9938622B2Apr 10, 2018
Method to deposit CVD ruthenium
APPLIED MATERIALS INC2 citations72
US11270911B2Mar 8, 2022
Doping of metal barrier layers
APPLIED MATERIALS INC2 citations71
US10157787B2Dec 18, 2018
Method and apparatus for depositing cobalt in a feature
APPLIED MATERIALS INC4 citations71
US12243774B2Mar 4, 2025
Impurity removal in doped ALD tantalum nitride
APPLIED MATERIALS INC0 citations62
US12157943B2Dec 3, 2024
Methods of selective deposition
APPLIED MATERIALS INC0 citations62
US11784127B2Oct 10, 2023
Ruthenium liner and cap for back-end-of-line
APPLIED MATERIALS INC0 citations62
US11410881B2Aug 9, 2022
Impurity removal in doped ALD tantalum nitride
APPLIED MATERIALS INC1 citations62
US11171046B2Nov 9, 2021
Methods for forming cobalt and ruthenium capping layers for interconnect structures
APPLIED MATERIALS INC0 citations62
US12463052B2Nov 4, 2025
Directional selective junction clean with field polymer protections
APPLIED MATERIALS INC0 citations61
US12347695B2Jul 1, 2025
Methods for controlling contact resistance in cobalt-titanium structures
APPLIED MATERIALS INC0 citations61
US11948836B2Apr 2, 2024
Deposition of metal films with tungsten liner
APPLIED MATERIALS INC0 citations61
US11424132B2Aug 23, 2022
Methods and apparatus for controlling contact resistance in cobalt-titanium structures
APPLIED MATERIALS INC0 citations61
US11171045B2Nov 9, 2021
Deposition of metal films with tungsten liner
APPLIED MATERIALS INC0 citations61
US10892186B2Jan 12, 2021
Integration of ALD copper with high temperature PVD copper deposition for BEOL interconnect
APPLIED MATERIALS INC0 citations61
US11527437B2Dec 13, 2022
Methods and apparatus for intermixing layer for enhanced metal reflow
APPLIED MATERIALS INC0 citations52
US11587873B2Feb 21, 2023
Binary metal liner layers
APPLIED MATERIALS INC0 citations51
US11417568B2Aug 16, 2022
Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill
APPLIED MATERIALS INC0 citations51
US10714388B2Jul 14, 2020
Method and apparatus for depositing cobalt in a feature
APPLIED MATERIALS INC0 citations51
US11939666B2Mar 26, 2024
Methods and apparatus for precleaning and treating wafer surfaces
APPLIED MATERIALS INC0 citations50
US10014179B2Jul 3, 2018
Methods for forming cobalt-copper selective fill for an interconnect
APPLIED MATERIALS INC0 citations41
SAMSUNG ELECTRONICS CO LTD
4 patentsUS8043922B2Oct 25, 2011
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations82
US11672132B2Jun 6, 2023
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7723194B2May 25, 2010
Semiconductor device having silicide layers and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7439593B2Oct 21, 2008
Semiconductor device having silicide formed with blocking insulation layer
SAMSUNG ELECTRONICS CO LTD1 citations51