P

Inventor

HUANG SHIH-SYUAN

TW18 patents
⚠️ This page may combine multiple inventors who share the name “HUANG SHIH-SYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

17 patents
US11183560B2Nov 23, 2021

Multi-gate semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10522622B2Dec 31, 2019

Multi-gate semiconductor device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9419136B2Aug 16, 2016

Dislocation stress memorization technique (DSMT) on epitaxial channel devices

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9224814B2Dec 29, 2015

Process design to improve transistor variations and performance

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11923413B2Mar 5, 2024

Semiconductor structure with extended contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245005B2Feb 8, 2022

Method for manufacturing semiconductor structure with extended contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9899475B2Feb 20, 2018

Epitaxial channel with a counter-halo implant to improve analog gain

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9899517B2Feb 20, 2018

Dislocation stress memorization technique (DSMT) on epitaxial channel devices

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9659776B2May 23, 2017

Doping for FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9536746B2Jan 3, 2017

Recess and epitaxial layer to improve transistor performance

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12389645B2Aug 12, 2025

Semiconductor structure with extended contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272726B2Apr 8, 2025

Semiconductor structure with nanostructure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11824088B2Nov 21, 2023

Method for forming multi-gate semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9502559B2Nov 22, 2016

Dislocation stress memorization technique (DSMT) on epitaxial channel devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US9768297B2Sep 19, 2017

Process design to improve transistor variations and performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9425099B2Aug 23, 2016

Epitaxial channel with a counter-halo implant to improve analog gain

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9252236B2Feb 2, 2016

Counter pocket implant to improve analog gain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41

TAIWAN SEMICONDUCTOR MFG

1 patent