P

Inventor

LI XIAOHANG

US20 patents
⚠️ This page may combine multiple inventors who share the name “LI XIAOHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNIV KING ABDULLAH SCI & TECH

12 patents
US12142702B2Nov 12, 2024

Optoelectronic device formed on a flexible substrate

UNIV KING ABDULLAH SCI & TECH0 citations60
US12046698B2Jul 23, 2024

Optoelectronic device having a boron nitride alloy electron blocking layer and method of production

UNIV KING ABDULLAH SCI & TECH0 citations53
US11069834B2Jul 20, 2021

Optoelectronic device having a boron nitride alloy electron blocking layer and method of production

UNIV KING ABDULLAH SCI & TECH0 citations53
US12166153B2Dec 10, 2024

Light-emitting device with polarization modulated last quantum barrier

UNIV KING ABDULLAH SCI & TECH0 citations51
US12007529B2Jun 11, 2024

Multilayer metalens

UNIV KING ABDULLAH SCI & TECH0 citations51
US11979965B2May 7, 2024

Susceptors for induction heating with thermal uniformity

UNIV KING ABDULLAH SCI & TECH0 citations50
US11764327B2Sep 19, 2023

Light emitting diode with a graded quantum barrier layer

UNIV KING ABDULLAH SCI & TECH0 citations50
US11339478B2May 24, 2022

Susceptor

UNIV KING ABDULLAH SCI & TECH0 citations50
US11233143B2Jan 25, 2022

High electron mobility transistor having a boron nitride alloy interlayer and method of production

UNIV KING ABDULLAH SCI & TECH0 citations50
US11264238B2Mar 1, 2022

Forming III nitride alloys

UNIV KING ABDULLAH SCI & TECH0 citations49
US10916424B2Feb 9, 2021

Methods for forming graded wurtzite III-nitride alloy layers

UNIV KING ABDULLAH SCI & TECH0 citations49
US12588315B2Mar 24, 2026

III-nitride semiconuctor devices having a boron nitride alloy contact layer and method of production

UNIV KING ABDULLAH SCI & TECH0 citations45

CISCO TECH INC

4 patents

LI XIAOHANG

1 patent

GOOGLE LLC

1 patent

HONOR DEVICE CO LTD

1 patent

TANSU NELSON

1 patent