P

Inventor

SUN SHIYU

US54 patents
⚠️ This page may combine multiple inventors who share the name “SUN SHIYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

16 patents
US9484406B1Nov 1, 2016

Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications

APPLIED MATERIALS INC79 citations97
US10177227B1Jan 8, 2019

Method for fabricating junctions and spacers for horizontal gate all around devices

APPLIED MATERIALS INC40 citations92
US10269571B2Apr 23, 2019

Methods for fabricating nanowire for semiconductor applications

APPLIED MATERIALS INC19 citations86
US10790183B2Sep 29, 2020

Selective oxidation for 3D device isolation

APPLIED MATERIALS INC14 citations85
US9865735B2Jan 9, 2018

Horizontal gate all around and FinFET device isolation

APPLIED MATERIALS INC4 citations83
US9673277B2Jun 6, 2017

Methods and apparatus for forming horizontal gate all around device structures

APPLIED MATERIALS INC13 citations83
US9460920B1Oct 4, 2016

Horizontal gate all around device isolation

APPLIED MATERIALS INC15 citations83
US10777650B2Sep 15, 2020

Horizontal gate all around device nanowire air gap spacer formation

APPLIED MATERIALS INC5 citations82
US11145761B2Oct 12, 2021

Horizontal gate all around and FinFET device isolation

APPLIED MATERIALS INC2 citations72
US10573719B2Feb 25, 2020

Horizontal gate all around device isolation

APPLIED MATERIALS INC2 citations72
US10490666B2Nov 26, 2019

Horizontal gate all around and FinFET device isolation

APPLIED MATERIALS INC1 citations72
US9960275B1May 1, 2018

Method of fabricating air-gap spacer for N7/N5 finFET and beyond

APPLIED MATERIALS INC2 citations71
US11018223B2May 25, 2021

Methods for forming device isolation for semiconductor applications

APPLIED MATERIALS INC0 citations62
US11848369B2Dec 19, 2023

Horizontal gate-all-around device nanowire air gap spacer formation

APPLIED MATERIALS INC0 citations61
US11282936B2Mar 22, 2022

Horizontal gate all around device nanowire air gap spacer formation

APPLIED MATERIALS INC0 citations61
US9530898B2Dec 27, 2016

Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof

APPLIED MATERIALS INC0 citations49

SHANGHAI EASY USE TOOLS ENTPR CO LTD

13 patents

SHANGHAI EASY-USE TOOLS ENTPR CO LTD

6 patents

OMNIVISION TECH INC

6 patents

SUN SHIYU

4 patents

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

2 patents

WILMAR CORP

1 patent

GANGULY UDAYAN

1 patent

AMAZON TECH INC

1 patent

Showing the top 50 of 54 patents by PatentIndex Score.