Inventor
KUNG SHENG-CHIN
US9 patents
Patents
9 patentsUS10777650B2Sep 15, 2020
Horizontal gate all around device nanowire air gap spacer formation
APPLIED MATERIALS INC5 citations82
US10861722B2Dec 8, 2020
Integrated semiconductor processing
APPLIED MATERIALS INC6 citations72
US9966438B2May 8, 2018
Method of doped germanium formation
APPLIED MATERIALS INC5 citations72
US11456178B2Sep 27, 2022
Gate interface engineering with doped layer
APPLIED MATERIALS INC0 citations62
US11848369B2Dec 19, 2023
Horizontal gate-all-around device nanowire air gap spacer formation
APPLIED MATERIALS INC0 citations61
US11282936B2Mar 22, 2022
Horizontal gate all around device nanowire air gap spacer formation
APPLIED MATERIALS INC0 citations61
US11011635B2May 18, 2021
Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (FINFET) device
APPLIED MATERIALS INC1 citations61
US11271097B2Mar 8, 2022
Cap oxidation for FinFET formation
APPLIED MATERIALS INC0 citations60
US10249479B2Apr 2, 2019
Magnet configurations for radial uniformity tuning of ICP plasmas
APPLIED MATERIALS INC0 citations49