P

Inventor

MALI JIM

US52 patents
⚠️ This page may combine multiple inventors who share the name “MALI JIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BECKER SCOTT T

33 patents
US8847329B2Sep 30, 2014

Cross-coupled transistor circuit defined having diffusion regions of common node on opposing sides of same gate electrode track with at least two non-inner positioned gate contacts

BECKER SCOTT T63 citations99
US8735995B2May 27, 2014

Cross-coupled transistor circuit defined on three gate electrode tracks with diffusion regions of common node on opposing sides of same gate electrode track

BECKER SCOTT T57 citations99
US8575706B2Nov 5, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two different gate level features inner extensions beyond gate electrode

BECKER SCOTT T76 citations99
US8405163B2Mar 26, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor-forming gate level feature

BECKER SCOTT T86 citations99
US8395224B2Mar 12, 2013

Linear gate level cross-coupled transistor device with non-overlapping PMOS transistors and non-overlapping NMOS transistors relative to directions of gate electrodes

BECKER SCOTT T92 citations99
US8863063B2Oct 14, 2014

Finfet transistor circuit

BECKER SCOTT T125 citations97
US8866197B2Oct 21, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two gate electrodes electrically connected to each other through another transistor forming gate level feature

BECKER SCOTT T19 citations96
US8729606B2May 20, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels

BECKER SCOTT T15 citations96
US8569841B2Oct 29, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least one gate level feature extending into adjacent gate level feature layout channel

BECKER SCOTT T16 citations96
US9009641B2Apr 14, 2015

Circuits with linear finfet structures

BECKER SCOTT T34 citations94
US9117050B2Aug 25, 2015

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate contact position and offset specifications

BECKER SCOTT T6 citations93
US9081931B2Jul 14, 2015

Cross-coupled transistor circuit having diffusion regions of common node on opposing sides of same gate electrode track and gate node connection through single interconnect layer

BECKER SCOTT T4 citations93
US8816402B2Aug 26, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate level feature layout channel including single transistor

BECKER SCOTT T8 citations93
US8735944B2May 27, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with serially connected transistors

BECKER SCOTT T8 citations93
US8669594B2Mar 11, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within at least twelve gate level feature layout channels

BECKER SCOTT T4 citations93
US8552509B2Oct 8, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with other transistors positioned between cross-coupled transistors

BECKER SCOTT T7 citations93
US8552508B2Oct 8, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor-forming gate level feature and electrical connection of transistor gates through linear interconnect conductors in single interconnect layer

BECKER SCOTT T7 citations93
US8592872B2Nov 26, 2013

Integrated circuit including cross-coupled transistors with two transistors of different type having gate electrodes formed by common gate level feature with shared diffusion regions on opposite sides of common gate level feature

BECKER SCOTT T4 citations82
US8558322B2Oct 15, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two gate electrodes electrically connected to each other through gate level feature

BECKER SCOTT T4 citations82
US8405162B2Mar 26, 2013

Integrated circuit including gate electrode level region including cross-coupled transistors having at least one gate contact located over outer portion of gate electrode level region

BECKER SCOTT T4 citations82
US8835989B2Sep 16, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate electrode placement specifications

BECKER SCOTT T3 citations74
US8785978B2Jul 22, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with electrical connection of cross-coupled transistors through same interconnect layer

BECKER SCOTT T3 citations74
US8785979B2Jul 22, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with two inside positioned gate contacts and two outside positioned gate contacts and electrical connection of cross-coupled transistors through same interconnect layer

BECKER SCOTT T3 citations74
US8772839B2Jul 8, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts having offset and aligned relationships and electrical connection of transistor gates through linear interconnect conductors in single interconnect layer

BECKER SCOTT T3 citations74
US8742463B2Jun 3, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with outer positioned gate contacts

BECKER SCOTT T3 citations74
US8742462B2Jun 3, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate contact position specifications

BECKER SCOTT T3 citations74
US8729643B2May 20, 2014

Cross-coupled transistor circuit including offset inner gate contacts

BECKER SCOTT T3 citations74
US8680583B2Mar 25, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within at least nine gate level feature layout channels

BECKER SCOTT T1 citations74
US8669595B2Mar 11, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate contact position, alignment, and offset specifications

BECKER SCOTT T3 citations74
US8587034B2Nov 19, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts and electrical connection of transistor gates through linear interconnect conductors in single interconnect layer

BECKER SCOTT T3 citations74
US8581303B2Nov 12, 2013

Integrated circuit including cross-coupled trasistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts having offset relationships and electrical connection of cross-coupled transistors through same interconnect layer

BECKER SCOTT T3 citations74
US8581304B2Nov 12, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts having offset and aligned relationships

BECKER SCOTT T3 citations74
US8564071B2Oct 22, 2013

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two different gate level feature extensions beyond contact

BECKER SCOTT T3 citations74

TELA INNOVATIONS INC

15 patents
US8836045B2Sep 16, 2014

Cross-coupled transistor circuit having diffusion regions of common node on opposing sides of same gate electrode track

TELA INNOVATIONS INC57 citations99
US9202779B2Dec 1, 2015

Enforcement of semiconductor structure regularity for localized transistors and interconnect

TELA INNOVATIONS INC42 citations98
US8701071B2Apr 15, 2014

Enforcement of semiconductor structure regularity for localized transistors and interconnect

TELA INNOVATIONS INC64 citations98
US8853794B2Oct 7, 2014

Integrated circuit within semiconductor chip including cross-coupled transistor configuration

TELA INNOVATIONS INC16 citations96
US9536899B2Jan 3, 2017

Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for manufacturing the same

TELA INNOVATIONS INC4 citations93
US9245081B2Jan 26, 2016

Semiconductor chip including digital logic circuit including at least nine linear-shaped conductive structures collectively forming gate electrodes of at least six transistors with some transistors forming cross-coupled transistor configuration and associated methods

TELA INNOVATIONS INC4 citations93
US9213792B2Dec 15, 2015

Semiconductor chip including digital logic circuit including at least six transistors with some transistors forming cross-coupled transistor configuration and associated methods

TELA INNOVATIONS INC7 citations93
US9208279B2Dec 8, 2015

Semiconductor chip including digital logic circuit including linear-shaped conductive structures having electrical connection areas located within inner region between transistors of different type and associated methods

TELA INNOVATIONS INC4 citations93
US8872283B2Oct 28, 2014

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor-forming gate level feature

TELA INNOVATIONS INC6 citations93
US8847331B2Sep 30, 2014

Semiconductor chip including region having cross-coupled transistor configuration with offset electrical connection areas on gate electrode forming conductive structures and at least two different inner extension distances of gate electrode forming conductive structures

TELA INNOVATIONS INC6 citations93
US10658385B2May 19, 2020

Cross-coupled transistor circuit defined on four gate electrode tracks

TELA INNOVATIONS INC2 citations84
US9871056B2Jan 16, 2018

Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for manufacturing the same

TELA INNOVATIONS INC3 citations84
US8853793B2Oct 7, 2014

Integrated circuit including gate electrode level region including cross-coupled transistors having gate contacts located over inner portion of gate electrode level region and offset gate level feature line ends

TELA INNOVATIONS INC3 citations74
US9530734B2Dec 27, 2016

Enforcement of semiconductor structure regularity for localized transistors and interconnect

TELA INNOVATIONS INC3 citations73
US10727252B2Jul 28, 2020

Semiconductor chip including integrated circuit having cross-coupled transistor configuration and method for manufacturing the same

TELA INNOVATIONS INC0 citations63

KORNACHUK STEPHEN

1 patent

ARM PHYSICAL IP INC

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.