P

Inventor

SHIN HWA-SOOK

KR17 patents
⚠️ This page may combine multiple inventors who share the name “SHIN HWA-SOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

13 patents
US6927452B2Aug 9, 2005

Semiconductor device having dual isolation structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD36 citations92
US6773995B2Aug 10, 2004

Double diffused MOS transistor and method for manufacturing same

SAMSUNG ELECTRONICS CO LTD32 citations92
US6815794B2Nov 9, 2004

Semiconductor devices with multiple isolation structure and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD21 citations91
US6635536B2Oct 21, 2003

Method for manufacturing semiconductor memory device

SAMSUNG ELECTRONICS CO LTD22 citations91
US7297604B2Nov 20, 2007

Semiconductor device having dual isolation structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7211515B2May 1, 2007

Methods of forming silicide layers on source/drain regions of MOS transistors

SAMSUNG ELECTRONICS CO LTD16 citations84
US6187686B1Feb 13, 2001

Methods for forming patterned platinum layers using masking layers including titanium and related structures

SAMSUNG ELECTRONICS CO LTD7 citations73
US6159811ADec 12, 2000

Methods for patterning microelectronic structures using chlorine, oxygen, and fluorine

SAMSUNG ELECTRONICS CO LTD14 citations72
US6924530B2Aug 2, 2005

Double diffused MOS transistor and method for manufacturing same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7517752B2Apr 14, 2009

Method of fabricating semiconductor device having storage capacitor and higher voltage resistance capacitor and semiconductor device fabricated using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US5914276AJun 22, 1999

Methods of forming electrically conductive lines using nitrogen and chlorine containing gas mixtures

SAMSUNG ELECTRONICS CO LTD5 citations62
US6087264AJul 11, 2000

Methods for patterning microelectronic structures using chlorine and oxygen

SAMSUNG ELECTRONICS CO LTD6 citations61
US7446387B2Nov 4, 2008

High voltage transistor and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations60

CHANG DONG-RYUL

3 patents

SHIN HWA-SOOK

1 patent