Inventor
SHIN HWA-SOOK
KR17 patents
⚠️ This page may combine multiple inventors who share the name “SHIN HWA-SOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS6927452B2Aug 9, 2005
Semiconductor device having dual isolation structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD36 citations92
US6773995B2Aug 10, 2004
Double diffused MOS transistor and method for manufacturing same
SAMSUNG ELECTRONICS CO LTD32 citations92
US6815794B2Nov 9, 2004
Semiconductor devices with multiple isolation structure and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD21 citations91
US6635536B2Oct 21, 2003
Method for manufacturing semiconductor memory device
SAMSUNG ELECTRONICS CO LTD22 citations91
US7297604B2Nov 20, 2007
Semiconductor device having dual isolation structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7211515B2May 1, 2007
Methods of forming silicide layers on source/drain regions of MOS transistors
SAMSUNG ELECTRONICS CO LTD16 citations84
US6187686B1Feb 13, 2001
Methods for forming patterned platinum layers using masking layers including titanium and related structures
SAMSUNG ELECTRONICS CO LTD7 citations73
US6159811ADec 12, 2000
Methods for patterning microelectronic structures using chlorine, oxygen, and fluorine
SAMSUNG ELECTRONICS CO LTD14 citations72
US6924530B2Aug 2, 2005
Double diffused MOS transistor and method for manufacturing same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7517752B2Apr 14, 2009
Method of fabricating semiconductor device having storage capacitor and higher voltage resistance capacitor and semiconductor device fabricated using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US5914276AJun 22, 1999
Methods of forming electrically conductive lines using nitrogen and chlorine containing gas mixtures
SAMSUNG ELECTRONICS CO LTD5 citations62
US6087264AJul 11, 2000
Methods for patterning microelectronic structures using chlorine and oxygen
SAMSUNG ELECTRONICS CO LTD6 citations61
US7446387B2Nov 4, 2008
High voltage transistor and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations60