Inventor
GONG YUEFENG
CN2 patents
Patents
2 patentsUS9276202B2Mar 1, 2016
Phase-change storage unit containing TiSiN material layer and method for preparing the same
SHANGHAI INST MICROSYS & INF2 citations58
US9362493B2Jun 7, 2016
Phase-change storage unit for replacing DRAM and FLASH and manufacturing method thereof
SHANGHAI INST MICROSYS & INF0 citations34