Inventor
PAI YI-FANG
TW33 patents
⚠️ This page may combine multiple inventors who share the name “PAI YI-FANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
22 patentsUS9997631B2Jun 12, 2018
Methods for reducing contact resistance in semiconductors manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US11581425B2Feb 14, 2023
Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10734517B2Aug 4, 2020
Integrated circuits having source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9786780B2Oct 10, 2017
Integrated circuits having source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9647115B1May 9, 2017
Semiconductor structure with enhanced contact and method of manufacture the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9443847B2Sep 13, 2016
Epitaxial formation of source and drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10340190B2Jul 2, 2019
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12068395B2Aug 20, 2024
Method for forming an undoped region under a source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11923200B2Mar 5, 2024
Integrated circuits having source/drain structure and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11373867B2Jun 28, 2022
Integrated circuits having source/drain structure and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9412870B2Aug 9, 2016
Device with engineered epitaxial region and methods of making same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12389671B2Aug 12, 2025
Source/drain regions of semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11804487B2Oct 31, 2023
Source/drain regions of semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11296080B2Apr 5, 2022
Source/drain regions of semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12057450B2Aug 6, 2024
Epitaxy regions with large landing areas for contact plugs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11652105B2May 16, 2023
Epitaxy regions with large landing areas for contact plugs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12094778B2Sep 17, 2024
Fin field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12205849B2Jan 21, 2025
Semiconductor device structure with source/drain structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9564509B2Feb 7, 2017
Method of fabricating an integrated circuit device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10861935B2Dec 8, 2020
Semiconductor device source/drain region with arsenic-containing barrier region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10374038B2Aug 6, 2019
Semiconductor device source/drain region with arsenic-containing barrier region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10134896B2Nov 20, 2018
Cyclic deposition etch chemical vapor deposition epitaxy to reduce EPI abnormality
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
SU CHIEN-CHANG
3 patentsTAIWAN SEMICONDUCTOR MFG
3 patentsUS8906789B2Dec 9, 2014
Asymmetric cyclic desposition etch epitaxy
TAIWAN SEMICONDUCTOR MFG9 citations81
US8343872B2Jan 1, 2013
Method of forming strained structures with compound profiles in semiconductor devices
TAIWAN SEMICONDUCTOR MFG3 citations63
US9356150B2May 31, 2016
Method for incorporating impurity element in EPI silicon process
TAIWAN SEMICONDUCTOR MFG0 citations52