P

Inventor

PAI YI-FANG

TW33 patents
⚠️ This page may combine multiple inventors who share the name “PAI YI-FANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

22 patents
US9997631B2Jun 12, 2018

Methods for reducing contact resistance in semiconductors manufacturing process

TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US11581425B2Feb 14, 2023

Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10734517B2Aug 4, 2020

Integrated circuits having source/drain structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9786780B2Oct 10, 2017

Integrated circuits having source/drain structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9647115B1May 9, 2017

Semiconductor structure with enhanced contact and method of manufacture the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US9443847B2Sep 13, 2016

Epitaxial formation of source and drain regions

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10340190B2Jul 2, 2019

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12068395B2Aug 20, 2024

Method for forming an undoped region under a source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11923200B2Mar 5, 2024

Integrated circuits having source/drain structure and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11373867B2Jun 28, 2022

Integrated circuits having source/drain structure and method of making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9412870B2Aug 9, 2016

Device with engineered epitaxial region and methods of making same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US12389671B2Aug 12, 2025

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11804487B2Oct 31, 2023

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11296080B2Apr 5, 2022

Source/drain regions of semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12057450B2Aug 6, 2024

Epitaxy regions with large landing areas for contact plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11652105B2May 16, 2023

Epitaxy regions with large landing areas for contact plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12094778B2Sep 17, 2024

Fin field-effect transistor device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12205849B2Jan 21, 2025

Semiconductor device structure with source/drain structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9564509B2Feb 7, 2017

Method of fabricating an integrated circuit device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10861935B2Dec 8, 2020

Semiconductor device source/drain region with arsenic-containing barrier region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10374038B2Aug 6, 2019

Semiconductor device source/drain region with arsenic-containing barrier region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10134896B2Nov 20, 2018

Cyclic deposition etch chemical vapor deposition epitaxy to reduce EPI abnormality

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40

SU CHIEN-CHANG

3 patents

TAIWAN SEMICONDUCTOR MFG

3 patents

TSAI CHUN HSIUNG

1 patent

HUANG SHIH-HSIEN

1 patent

YEH MING-HSI

1 patent

WONG KING-YUEN

1 patent

WU CHII-MING

1 patent