Inventor
Yao fu-wei
TW77 patents
⚠️ This page may combine multiple inventors who share the name “Yao fu-wei”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
35 patentsUS9425301B2Aug 23, 2016
Sidewall passivation for HEMT devices
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US11404557B2Aug 2, 2022
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10522647B2Dec 31, 2019
Sidewall passivation for HEMT devices
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10411681B2Sep 10, 2019
Semiconductor device and circuit protecting method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10050117B2Aug 14, 2018
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9882553B2Jan 30, 2018
Semiconductor device and circuit protecting method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9704968B2Jul 11, 2017
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9443969B2Sep 13, 2016
Transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US11854909B2Dec 26, 2023
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11824109B2Nov 21, 2023
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522077B2Dec 6, 2022
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11522066B2Dec 6, 2022
Sidewall passivation for HEMT devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10868136B2Dec 15, 2020
Sidewall passivation for HEMT devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10790375B2Sep 29, 2020
High electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10741665B2Aug 11, 2020
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10319644B2Jun 11, 2019
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10276657B2Apr 30, 2019
Isolation structure for active devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9685525B2Jun 20, 2017
Sidewall passivation for HEMT devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9627275B1Apr 18, 2017
Hybrid semiconductor structure on a common substrate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9508807B2Nov 29, 2016
Method of forming high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12230690B2Feb 18, 2025
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11804538B2Oct 31, 2023
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9583588B2Feb 28, 2017
Method of making high electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9553182B2Jan 24, 2017
Circuit structure, transistor and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9419093B2Aug 16, 2016
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12563819B2Feb 24, 2026
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272741B2Apr 8, 2025
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11843047B2Dec 12, 2023
Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11705486B2Jul 18, 2023
Isolation structure for active devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11430702B2Aug 30, 2022
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349023B2May 31, 2022
Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10868135B2Dec 15, 2020
High electron mobility transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868134B2Dec 15, 2020
Method of making transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854711B2Dec 1, 2020
Isolation structure for active devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522630B2Dec 31, 2019
High electron mobility transistor structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
WONG KING-YUEN
3 patentsUS9165839B2Oct 20, 2015
Plasma protection diode for a HEMT device
WONG KING-YUEN6 citations84
US8624296B1Jan 7, 2014
High electron mobility transistor including an embedded flourine region
WONG KING-YUEN18 citations84
US8841703B2Sep 23, 2014
High electron mobility transistor and method of forming the same
WONG KING-YUEN4 citations73
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9147743B2Sep 29, 2015
High electron mobility transistor structure with improved breakdown voltage performance
TAIWAN SEMICONDUCTOR MFG4 citations84
US9184259B2Nov 10, 2015
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG2 citations63
US9111956B2Aug 18, 2015
Rectifier structures with low leakage
TAIWAN SEMICONDUCTOR MFG1 citations63
HSU CHUN-WEI
2 patentsYao fu-wei
2 patentsCHEN PO-CHIH
2 patentsYU CHEN-JU
2 patentsHSIUNG CHIH-WEN
1 patentShowing the top 50 of 77 patents by PatentIndex Score.