P

Inventor

Yao fu-wei

TW77 patents
⚠️ This page may combine multiple inventors who share the name “Yao fu-wei”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

35 patents
US9425301B2Aug 23, 2016

Sidewall passivation for HEMT devices

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US11404557B2Aug 2, 2022

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10522647B2Dec 31, 2019

Sidewall passivation for HEMT devices

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10411681B2Sep 10, 2019

Semiconductor device and circuit protecting method

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10050117B2Aug 14, 2018

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9882553B2Jan 30, 2018

Semiconductor device and circuit protecting method

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9704968B2Jul 11, 2017

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9443969B2Sep 13, 2016

Transistor having metal diffusion barrier

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US11854909B2Dec 26, 2023

Semiconductor structure and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11824109B2Nov 21, 2023

Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522077B2Dec 6, 2022

Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11522066B2Dec 6, 2022

Sidewall passivation for HEMT devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10868136B2Dec 15, 2020

Sidewall passivation for HEMT devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10790375B2Sep 29, 2020

High electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10741665B2Aug 11, 2020

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10319644B2Jun 11, 2019

Method for manufacturing semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10276657B2Apr 30, 2019

Isolation structure for active devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9685525B2Jun 20, 2017

Sidewall passivation for HEMT devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9627275B1Apr 18, 2017

Hybrid semiconductor structure on a common substrate

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9508807B2Nov 29, 2016

Method of forming high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12230690B2Feb 18, 2025

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11804538B2Oct 31, 2023

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9583588B2Feb 28, 2017

Method of making high electron mobility transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9553182B2Jan 24, 2017

Circuit structure, transistor and semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9419093B2Aug 16, 2016

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12563819B2Feb 24, 2026

Semiconductor structure and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272741B2Apr 8, 2025

Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11843047B2Dec 12, 2023

Integration of p-channel and n-channel E-FET III-V devices without parasitic channels

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11705486B2Jul 18, 2023

Isolation structure for active devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11430702B2Aug 30, 2022

Semiconductor structure and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349023B2May 31, 2022

Integration of p-channel and n-channel E-FET III-V devices without parasitic channels

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10868135B2Dec 15, 2020

High electron mobility transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868134B2Dec 15, 2020

Method of making transistor having metal diffusion barrier

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854711B2Dec 1, 2020

Isolation structure for active devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522630B2Dec 31, 2019

High electron mobility transistor structure and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

WONG KING-YUEN

3 patents

TAIWAN SEMICONDUCTOR MFG

3 patents

HSU CHUN-WEI

2 patents

Yao fu-wei

2 patents

CHEN PO-CHIH

2 patents

YU CHEN-JU

2 patents

HSIUNG CHIH-WEN

1 patent

Showing the top 50 of 77 patents by PatentIndex Score.