Inventor

YU JIUN-LEI JERRY

TW84 patents

⚠️ This page may combine multiple inventors who share the name “YU JIUN-LEI JERRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YU JIUN-LEI JERRY

TAIWAN SEMICONDUCTOR MFG CO LTD

Method of forming a high electron mobility transistor

Semiconductor structure, HEMT structure and method of forming the same

Method of forming a high electron mobility transistor

Semiconductor structure, HEMT structure and method of forming the same

Method of forming a high electron mobility transistor

Transistor having metal diffusion barrier

Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance

Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance

Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)

High electron mobility transistor

Method of forming a high electron mobility transistor

Isolation structure for active devices

Dicing method for power transistors

Method of forming high electron mobility transistor

Source leakage current suppression by source surrounding gate structure

Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performance

Method of forming a high electron mobility transistor

Method of forming a high electron mobility transistor

Method of making high electron mobility transistor structure

Circuit structure, transistor and semiconductor device

Method of forming a high electron mobility transistor

Barrier structure configured to increase performance of III-V devices

Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance

Semiconductor structure, HEMT structure and method of forming the same

Integration of p-channel and n-channel E-FET III-V devices without parasitic channels

Barrier structure configured to increase performance of III-V devices

Isolation structure for active devices

Semiconductor structure, HEMT structure and method of forming the same

Integration of p-channel and n-channel E-FET III-V devices without parasitic channels

Semiconductor structure, HEMT structure and method of forming the same

Semiconductor structure and manufacturing method thereof

Ring transistor structure

Ring transistor structure

Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)

WONG KING-YUEN

Plasma protection diode for a HEMT device

High electron mobility transistor including an embedded flourine region

High electron mobility transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG

High electron mobility transistor structure with improved breakdown voltage performance

Semiconductor structure and method of forming the same

Rectifier structures with low leakage

HSU CHUN-WEI

High electron mobility transistor including an isolation region

High electron mobility transistor

Yao fu-wei

High electron mobility transistor and method of forming the same

High electron mobility transistor structure with improved breakdown voltage performance

CHEN PO-CHIH

Method of forming a semiconductor structure

Semiconductor structure and method of forming the same

YU CHEN-JU

Circuit structure having islands between source and drain

Semiconductor structure and method of forming the same

THEI KONG-BENG

Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics

HSIUNG CHIH-WEN

Gallium nitride semiconductor devices and method making thereof