Inventor
SU CHIEN-CHANG
TW48 patents
⚠️ This page may combine multiple inventors who share the name “SU CHIEN-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS9831116B2Nov 28, 2017
FETS and methods of forming FETs
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations93
US9515187B2Dec 6, 2016
Controlling the shape of source/drain regions in FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11004724B2May 11, 2021
FETS and methods of forming FETS
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10734517B2Aug 4, 2020
Integrated circuits having source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9786780B2Oct 10, 2017
Integrated circuits having source/drain structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9601626B2Mar 21, 2017
Semiconductor device including fin structure with two channel layers and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11854901B2Dec 26, 2023
Semiconductor method and device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11728208B2Aug 15, 2023
FETS and methods of forming FETS
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10854602B2Dec 1, 2020
FinFET device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12191393B2Jan 7, 2025
Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US11923200B2Mar 5, 2024
Integrated circuits having source/drain structure and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11373867B2Jun 28, 2022
Integrated circuits having source/drain structure and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10177143B2Jan 8, 2019
FinFET device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9412870B2Aug 9, 2016
Device with engineered epitaxial region and methods of making same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US11367660B2Jun 21, 2022
Semiconductor method and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10326023B2Jun 18, 2019
Semiconductor device including fin structure with two channel layers and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9966469B2May 8, 2018
Semiconductor device including fin structure with two channel layers and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9865732B2Jan 9, 2018
Integrated circuits and methods of forming integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12094761B2Sep 17, 2024
FETs and methods of forming FETs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10867862B2Dec 15, 2020
Semiconductor method and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269618B2Apr 23, 2019
FETS and methods of forming FETS
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9564321B2Feb 7, 2017
Cyclic epitaxial deposition and etch processes
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations49
US11942550B2Mar 26, 2024
Nanosheet semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
US9831343B2Nov 28, 2017
Semiconductor device having NFET structure and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations38
TAIWAN SEMICONDUCTOR MFG
12 patentsUS8652894B2Feb 18, 2014
Method for fabricating a FinFET device
TAIWAN SEMICONDUCTOR MFG394 citations99
US8362575B2Jan 29, 2013
Controlling the shape of source/drain regions in FinFETs
TAIWAN SEMICONDUCTOR MFG242 citations99
US8975144B2Mar 10, 2015
Controlling the shape of source/drain regions in FinFETs
TAIWAN SEMICONDUCTOR MFG18 citations93
US8853039B2Oct 7, 2014
Defect reduction for formation of epitaxial layer in source and drain regions
TAIWAN SEMICONDUCTOR MFG11 citations84
US8846461B2Sep 30, 2014
Silicon layer for stopping dislocation propagation
TAIWAN SEMICONDUCTOR MFG8 citations84
US8344447B2Jan 1, 2013
Silicon layer for stopping dislocation propagation
TAIWAN SEMICONDUCTOR MFG13 citations84
US8906789B2Dec 9, 2014
Asymmetric cyclic desposition etch epitaxy
TAIWAN SEMICONDUCTOR MFG9 citations81
US9379208B2Jun 28, 2016
Integrated circuits and methods of forming integrated circuits
TAIWAN SEMICONDUCTOR MFG2 citations63
US9373695B2Jun 21, 2016
Method for improving selectivity of epi process
TAIWAN SEMICONDUCTOR MFG2 citations63
US8343872B2Jan 1, 2013
Method of forming strained structures with compound profiles in semiconductor devices
TAIWAN SEMICONDUCTOR MFG3 citations63
US9356150B2May 31, 2016
Method for incorporating impurity element in EPI silicon process
TAIWAN SEMICONDUCTOR MFG0 citations52
US9076734B2Jul 7, 2015
Defect reduction for formation of epitaxial layer in source and drain regions
TAIWAN SEMICONDUCTOR MFG0 citations52