Inventor

HSU CHERN-YOW

TW135 patents

⚠️ This page may combine multiple inventors who share the name “HSU CHERN-YOW”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSU CHERN-YOW

TAIWAN SEMICONDUCTOR MFG CO LTD

Techniques for MRAM MTJ top electrode connection

MRAM device and fabrication method

Semiconductor structure having magnetic tunneling junction (MTJ) layer

Self-aligned magnetoresistive random-access memory (MRAM) structure for process damage minimization

RRAM cell with bottom electrode

Semiconductor structure and method of manufacturing the same

Reversed stack MTJ

Semiconductor memory device and method for fabricating the same

Semiconductor device and method of forming the same

Semiconductor device and method of forming the same

Techniques for MRAM MTJ top electrode connection

Reversed stack MTJ

Storage device with composite spacer and method for manufacturing the same

VIA structure and methods of forming the same

Resistance variable memory structure and method of forming the same

Memory cell having resistance variable film and method of making the same

RRAM cell structure with conductive etch-stop layer

MRAM structure for process damage minimization

Memory cell having resistance variable film and method of making the same

Storage device with composite spacer and method for manufacturing the same

Reversed stack MTJ

Semiconductor arrangment with capacitor

MIM capacitors with improved reliability

Process to improve performance for metal-insulator-metal (MIM) capacitors

Semiconductor device and method of forming the same

Semiconductor structure

Memory device with composite spacer

RRAM cell structure with conductive etch-stop layer

Device with composite spacer and method for manufacturing the same

Semiconductor arrangement with capacitor and method of fabricating the same

Magnetic tunnel junction device and formation method thereof

Method for manufacturing resistive random access memory structure

Semiconductor memory device and method for fabricating the same

Semiconductor structure

Semiconductor structure and method of forming the same

Magnetic memory structure and method of forming the same

Semiconductor structure and method of manufacturing the same

Semiconductor structure and method for manufacturing the same

Film scheme for bumping

Memory cell having resistance variable film and method of making the same

Semiconductor memory device and method for fabricating the same

Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method

Semiconductor arrangement having capacitor separated from active region

Magnetoresistive random access memory structure and method of forming the same

Metal-insulator-metal (MIM) capacitors and forming methods

Magnetic tunnel junction device

TAIWAN SEMICONDUCTOR MFG

RRAM structure and process using composite spacer

Resistance variable memory structure and method of forming the same

Methods of forming a magnetic tunnel junction device

HUANG WEI-HANG

Hole first hardmask definition