Inventor
CAMERLENGHI EMILIO
IT38 patents
⚠️ This page may combine multiple inventors who share the name “CAMERLENGHI EMILIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
17 patentsUS6242793B1Jun 5, 2001
Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor
ST MICROELECTRONICS SRL25 citations93
US5576990ANov 19, 1996
Voltage regulator for non-volatile semiconductor memory devices
ST MICROELECTRONICS SRL26 citations92
US6420223B2Jul 16, 2002
Manufacturing process for non-volatile floating gate memory cells integrated on a semiconductor substrate and comprised in a cell matrix with an associated control circuitry
ST MICROELECTRONICS SRL14 citations84
US5682349AOct 28, 1997
Failure tolerant memory device, in particular of the flash EEPROM type
ST MICROELECTRONICS SRL10 citations74
US5659516AAug 19, 1997
Voltage regulator for non-volatile semiconductor electrically programmable memory devices
ST MICROELECTRONICS SRL6 citations74
US6284585B1Sep 4, 2001
Electronic memory device having bit lines with block selector switches
ST MICROELECTRONICS SRL6 citations73
US5969977AOct 19, 1999
Electronic memory device having bit lines with block selector switches
ST MICROELECTRONICS SRL5 citations73
US6537879B2Mar 25, 2003
Process for manufacturing a non-volatile memory cell with a floating gate region autoaligned to the isolation and with a high coupling coefficient
ST MICROELECTRONICS SRL12 citations72
US6372597B2Apr 16, 2002
Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor substrate
ST MICROELECTRONICS SRL3 citations63
US6944061B2Sep 13, 2005
Single cell erasing method for recovering memory cells under programming disturbs in non volatile semiconductor memory devices
ST MICROELECTRONICS SRL2 citations62
US6750505B2Jun 15, 2004
Non-volatile memory cell with floating gate region autoaligned to the isolation and with a high coupling coefficient
ST MICROELECTRONICS SRL4 citations61
US6124169ASep 26, 2000
Contact structure and associated process for production of semiconductor electronic devices and in particular nonvolatile EPROM and flash EPROM memories
ST MICROELECTRONICS SRL5 citations61
US6380582B2Apr 30, 2002
Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates
ST MICROELECTRONICS SRL5 citations60
US6101124AAug 8, 2000
Memory block for realizing semiconductor memory devices and corresponding manufacturing process
ST MICROELECTRONICS SRL0 citations52
US6903995B2Jun 7, 2005
Test structure for the measurement of contact to gate distance in non-volatile memory devices and corresponding test method
ST MICROELECTRONICS SRL1 citations51
US6130165AOct 10, 2000
Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates
ST MICROELECTRONICS SRL1 citations50
US6376306B1Apr 23, 2002
Method for forming non volatile memory structures on a semiconductor substrate
ST MICROELECTRONICS SRL0 citations40
MICRON TECHNOLOGY INC
12 patentsUS11818893B2Nov 14, 2023
Microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC6 citations84
US11417676B2Aug 16, 2022
Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC7 citations84
US9214389B2Dec 15, 2015
Methods of forming memory arrays
MICRON TECHNOLOGY INC6 citations83
US10756105B2Aug 25, 2020
Memory arrays and methods used in forming a memory array
MICRON TECHNOLOGY INC6 citations73
US11094627B2Aug 17, 2021
Methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC4 citations72
US11011236B2May 18, 2021
Erasing memory
MICRON TECHNOLOGY INC2 citations71
US11514953B2Nov 29, 2022
Integrated assemblies, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US11309039B2Apr 19, 2022
Apparatus for determining a pass voltage of a read operation
MICRON TECHNOLOGY INC0 citations62
US10950316B2Mar 16, 2021
Apparatus for determining a pass voltage of a read operation
MICRON TECHNOLOGY INC0 citations62
US12190961B2Jan 7, 2025
Erasing memory
MICRON TECHNOLOGY INC0 citations61
US11514987B2Nov 29, 2022
Erasing memory
MICRON TECHNOLOGY INC0 citations61
US10777286B2Sep 15, 2020
Apparatus and methods for determining data states of memory cells
MICRON TECHNOLOGY INC0 citations51
SGS THOMSON MICROELECTRONICS
5 patentsUS6222245B1Apr 24, 2001
High capacity capacitor and corresponding manufacturing process
SGS THOMSON MICROELECTRONICS23 citations92
US5905677AMay 18, 1999
Voltage regulator for non-volatile semiconductor electrically programmable memory devices
SGS THOMSON MICROELECTRONICS24 citations92
US5440510AAug 8, 1995
Integrated circuit entirely protected against ultraviolet rays
SGS THOMSON MICROELECTRONICS21 citations92
US5330938AJul 19, 1994
Method of making non-volatile split gate EPROM memory cell and self-aligned field insulation
SGS THOMSON MICROELECTRONICS18 citations82
US5241499AAug 31, 1993
Non-volatile split gate eprom memory cell and self-aligned field insulation process for obtaining the above cell
SGS THOMSON MICROELECTRONICS10 citations74