P

Inventor

CAMERLENGHI EMILIO

IT38 patents
⚠️ This page may combine multiple inventors who share the name “CAMERLENGHI EMILIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS SRL

17 patents
US6242793B1Jun 5, 2001

Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor

ST MICROELECTRONICS SRL25 citations93
US5576990ANov 19, 1996

Voltage regulator for non-volatile semiconductor memory devices

ST MICROELECTRONICS SRL26 citations92
US6420223B2Jul 16, 2002

Manufacturing process for non-volatile floating gate memory cells integrated on a semiconductor substrate and comprised in a cell matrix with an associated control circuitry

ST MICROELECTRONICS SRL14 citations84
US5682349AOct 28, 1997

Failure tolerant memory device, in particular of the flash EEPROM type

ST MICROELECTRONICS SRL10 citations74
US5659516AAug 19, 1997

Voltage regulator for non-volatile semiconductor electrically programmable memory devices

ST MICROELECTRONICS SRL6 citations74
US6284585B1Sep 4, 2001

Electronic memory device having bit lines with block selector switches

ST MICROELECTRONICS SRL6 citations73
US5969977AOct 19, 1999

Electronic memory device having bit lines with block selector switches

ST MICROELECTRONICS SRL5 citations73
US6537879B2Mar 25, 2003

Process for manufacturing a non-volatile memory cell with a floating gate region autoaligned to the isolation and with a high coupling coefficient

ST MICROELECTRONICS SRL12 citations72
US6372597B2Apr 16, 2002

Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor substrate

ST MICROELECTRONICS SRL3 citations63
US6944061B2Sep 13, 2005

Single cell erasing method for recovering memory cells under programming disturbs in non volatile semiconductor memory devices

ST MICROELECTRONICS SRL2 citations62
US6750505B2Jun 15, 2004

Non-volatile memory cell with floating gate region autoaligned to the isolation and with a high coupling coefficient

ST MICROELECTRONICS SRL4 citations61
US6124169ASep 26, 2000

Contact structure and associated process for production of semiconductor electronic devices and in particular nonvolatile EPROM and flash EPROM memories

ST MICROELECTRONICS SRL5 citations61
US6380582B2Apr 30, 2002

Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates

ST MICROELECTRONICS SRL5 citations60
US6101124AAug 8, 2000

Memory block for realizing semiconductor memory devices and corresponding manufacturing process

ST MICROELECTRONICS SRL0 citations52
US6903995B2Jun 7, 2005

Test structure for the measurement of contact to gate distance in non-volatile memory devices and corresponding test method

ST MICROELECTRONICS SRL1 citations51
US6130165AOct 10, 2000

Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates

ST MICROELECTRONICS SRL1 citations50
US6376306B1Apr 23, 2002

Method for forming non volatile memory structures on a semiconductor substrate

ST MICROELECTRONICS SRL0 citations40

MICRON TECHNOLOGY INC

12 patents

SGS THOMSON MICROELECTRONICS

5 patents

LODESTAR LICENSING GROUP LLC

1 patent

GHILARDI TECLA

1 patent

ST MICROELECTONICS SRL

1 patent

CAMERLENGHI EMILIO

1 patent