Inventor

AVCI UYGAR

US42 patents

Patents

42 patents

US11063131B2Jul 13, 2021

Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering

INTEL CORP31 citations94

US11138499B2Oct 5, 2021

Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits

INTEL CORP5 citations84

US11581417B2Feb 14, 2023

Improper ferroelectric active and passive devices

INTEL CORP4 citations74

US11646374B2May 9, 2023

Ferroelectric transistors to store multiple states of resistances for memory cells

INTEL CORP2 citations73

US11605624B2Mar 14, 2023

Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication

INTEL CORP1 citations63

US11862715B2Jan 2, 2024

Vertical tunneling field-effect transistors

INTEL CORP0 citations63

US12327581B2Jun 10, 2025

Embedded memory IC's with power supply droop circuitry coupled to ferroelectric capacitors

INTEL CORP0 citations62

US12176388B2Dec 24, 2024

Transition metal dichalcogenide nanowires and methods of fabrication

INTEL CORP0 citations62

US12125893B2Oct 22, 2024

Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric

INTEL CORP0 citations62

US12113117B2Oct 8, 2024

Piezo-resistive transistor based resonator with ferroelectric gate dielectric

INTEL CORP0 citations62

US12100731B2Sep 24, 2024

Crystalline bottom electrode for perovskite capacitors and methods of fabrication

INTEL CORP0 citations62

US12040378B2Jul 16, 2024

Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering

INTEL CORP0 citations62

US11727260B2Aug 15, 2023

Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits

INTEL CORP0 citations62

US11646356B2May 9, 2023

Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric

INTEL CORP0 citations62

US11637191B2Apr 25, 2023

Piezo-resistive transistor based resonator with ferroelectric gate dielectric

INTEL CORP0 citations62

US11594624B2Feb 28, 2023

Transistor structures formed with 2DEG at complex oxide interfaces

INTEL CORP0 citations62

US11552180B2Jan 10, 2023

Antiferroelectric perovskite gate oxide for transistor applications

INTEL CORP0 citations62

US11322504B2May 3, 2022

Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technology

INTEL CORP1 citations62

US10886265B2Jan 5, 2021

Integrated circuit device with a two-dimensional semiconductor material and a dielectric material that includes fixed charges

INTEL CORP0 citations62

US12266720B2Apr 1, 2025

Transistors with monocrystalline metal chalcogenide channel materials

INTEL CORP0 citations61

US11901400B2Feb 13, 2024

MFM capacitor and process for forming such

INTEL CORP0 citations61

US11769789B2Sep 26, 2023

MFM capacitor with multilayered oxides and metals and processes for forming such

INTEL CORP0 citations61

US11640984B2May 2, 2023

Transistor device with (anti)ferroelectric spacer structures

INTEL CORP0 citations61

US11695051B2Jul 4, 2023

Gate stacks for FinFET transistors

INTEL CORP0 citations56

US12166122B2Dec 10, 2024

Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication

INTEL CORP0 citations52

US11723188B2Aug 8, 2023

Replacement metal COB integration process for embedded DRAM

INTEL CORP0 citations52

US10186582B2Jan 22, 2019

Graphene fluorination for integration of graphene with insulators and devices

INTEL CORP0 citations52

US9952823B2Apr 24, 2018

Architecture for seamless integrated display system

INTEL CORP0 citations52

US12532480B2Jan 20, 2026

Embedded memory with double-walled ferroelectric capacitors

INTEL CORP0 citations51

US12349438B2Jul 1, 2025

Contact gating for 2D field effect transistors

INTEL CORP0 citations51

US12266712B2Apr 1, 2025

Transition metal dichalcogenide nanosheet transistors and methods of fabrication

INTEL CORP0 citations51

US12125895B2Oct 22, 2024

Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication

INTEL CORP0 citations51

US10522683B2Dec 31, 2019

Transistors with ballistic or quasi-ballistic carrier behavior and low resistance in source and drain nodes

INTEL CORP0 citations51

US12310101B2May 20, 2025

Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication

INTEL CORP0 citations50

US11616130B2Mar 28, 2023

Transistor device with variously conformal gate dielectric layers

INTEL CORP0 citations50

US12048165B2Jul 23, 2024

Ferroelectric capacitors and methods of fabrication

INTEL CORP0 citations48

US9741832B2Aug 22, 2017

Tunneling field effect transistors with a variable bandgap channel

INTEL CORP0 citations42

AVCI UYGAR

Patents

Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering

Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits

Improper ferroelectric active and passive devices

Ferroelectric transistors to store multiple states of resistances for memory cells

Ferroelectric resonator

Vertical tunneling field-effect transistors

Relaxor ferroelectric capacitors and methods of fabrication

Memory devices based on capacitors with built-in electric field

Architecture for seamless integrated display system

Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication

Vertical tunneling field-effect transistors

Embedded memory IC&#39;s with power supply droop circuitry coupled to ferroelectric capacitors

Transition metal dichalcogenide nanowires and methods of fabrication

Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric

Piezo-resistive transistor based resonator with ferroelectric gate dielectric

Crystalline bottom electrode for perovskite capacitors and methods of fabrication

Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering

Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits

Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectric

Piezo-resistive transistor based resonator with ferroelectric gate dielectric

Transistor structures formed with 2DEG at complex oxide interfaces

Antiferroelectric perovskite gate oxide for transistor applications

Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technology

Integrated circuit device with a two-dimensional semiconductor material and a dielectric material that includes fixed charges

Transistors with monocrystalline metal chalcogenide channel materials

MFM capacitor and process for forming such

MFM capacitor with multilayered oxides and metals and processes for forming such

Transistor device with (anti)ferroelectric spacer structures

Gate stacks for FinFET transistors

Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication

Replacement metal COB integration process for embedded DRAM

Graphene fluorination for integration of graphene with insulators and devices

Architecture for seamless integrated display system

Embedded memory with double-walled ferroelectric capacitors

Contact gating for 2D field effect transistors

Transition metal dichalcogenide nanosheet transistors and methods of fabrication

Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication

Transistors with ballistic or quasi-ballistic carrier behavior and low resistance in source and drain nodes

Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication

Transistor device with variously conformal gate dielectric layers

Ferroelectric capacitors and methods of fabrication

Tunneling field effect transistors with a variable bandgap channel

Embedded memory IC's with power supply droop circuitry coupled to ferroelectric capacitors