P

Inventor

CHANG SOU-CHI

US21 patents

Patents

21 patents
US11063131B2Jul 13, 2021

Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering

INTEL CORP31 citations94
US11581417B2Feb 14, 2023

Improper ferroelectric active and passive devices

INTEL CORP4 citations74
US11398562B2Jul 26, 2022

Magnetoelectric spin orbit logic transistor with a spin filter

INTEL CORP2 citations73
US11316027B2Apr 26, 2022

Relaxor ferroelectric capacitors and methods of fabrication

INTEL CORP2 citations73
US11171145B2Nov 9, 2021

Memory devices based on capacitors with built-in electric field

INTEL CORP3 citations70
US12495559B2Dec 9, 2025

Capacitor with dual dielectric layers

INTEL CORP1 citations63
US12437929B2Oct 7, 2025

Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor

INTEL CORP0 citations62
US12224309B2Feb 11, 2025

Capacitors with built-in electric fields

INTEL CORP0 citations62
US12100731B2Sep 24, 2024

Crystalline bottom electrode for perovskite capacitors and methods of fabrication

INTEL CORP0 citations62
US12040378B2Jul 16, 2024

Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering

INTEL CORP0 citations62
US11626475B2Apr 11, 2023

Trench capacitor with extended dielectric layer

INTEL CORP1 citations62
US11532439B2Dec 20, 2022

Ultra-dense ferroelectric memory with self-aligned patterning

INTEL CORP1 citations62
US11901400B2Feb 13, 2024

MFM capacitor and process for forming such

INTEL CORP0 citations61
US11769789B2Sep 26, 2023

MFM capacitor with multilayered oxides and metals and processes for forming such

INTEL CORP0 citations61
US11640984B2May 2, 2023

Transistor device with (anti)ferroelectric spacer structures

INTEL CORP0 citations61
US12166122B2Dec 10, 2024

Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication

INTEL CORP0 citations52
US12575111B2Mar 10, 2026

Back-end-of-line 2D memory cell

INTEL CORP0 citations50
US11980037B2May 7, 2024

Memory cells with ferroelectric capacitors separate from transistor gate stacks

INTEL CORP0 citations50
US11742407B2Aug 29, 2023

Multilayer high-k gate dielectric for a high performance logic transistor

INTEL CORP0 citations49
US12048165B2Jul 23, 2024

Ferroelectric capacitors and methods of fabrication

INTEL CORP0 citations48
US10861861B2Dec 8, 2020

Memory including a perovskite material

INTEL CORP0 citations42