Inventor
TSAI TZUNG-YI
TW15 patents
Patents
15 patentsUS10522409B2Dec 31, 2019
Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11088022B2Aug 10, 2021
Different isolation liners for different type FinFETs and associated isolation feature fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11302535B2Apr 12, 2022
Performing annealing process to improve fin quality of a FinFET semiconductor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US12349493B2Jul 1, 2025
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations68
US12550697B2Feb 10, 2026
Different isolation liners for different type FinFETs and associated isolation feature fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12020988B2Jun 25, 2024
Fin field effect transistor (FinFET) device structure with dummy fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11848230B2Dec 19, 2023
Different isolation liners for different type FinFETs and associated isolation feature fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569130B2Jan 31, 2023
Fin field effect transistor (FinFET) device structure with dummy Fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11437372B2Sep 6, 2022
Liner structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10395937B2Aug 27, 2019
Fin patterning for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12568700B2Mar 3, 2026
Method for forming isolation structure and semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12142490B2Nov 12, 2024
Performing annealing process to improve Fin quality of a FinFET semiconductor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11848339B2Dec 19, 2023
Semiconductor structure including isolation structure and method for forming isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12324232B2Jun 3, 2025
Liner structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10811318B2Oct 20, 2020
FIN field effect transistor (FinFET) device structure with dummy FIN structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52