Inventor
YANG TSUNG-YU
TW66 patents
⚠️ This page may combine multiple inventors who share the name “YANG TSUNG-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
36 patentsUS11031303B1Jun 8, 2021
Deep trench isolation structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10128259B1Nov 13, 2018
Method for manufacturing embedded memory using high-K-metal-gate (HKMG) technology
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9269591B2Feb 23, 2016
Handle wafer for high resistivity trap-rich SOI
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US10475877B1Nov 12, 2019
Multi-terminal inductor for integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US11575008B2Feb 7, 2023
Semiconductor arrangement and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450574B2Sep 20, 2022
Deep trench isolation structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10840333B2Nov 17, 2020
Semiconductor arrangement and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10269909B1Apr 23, 2019
Memory device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10170488B1Jan 1, 2019
Non-volatile memory of semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11670689B2Jun 6, 2023
Method for eliminating divot formation and semiconductor device manufactured using the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11532637B2Dec 20, 2022
Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10879257B2Dec 29, 2020
Integrated chip having a logic gate electrode and a tunnel dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10672860B2Jun 2, 2020
Multi-terminal inductor for integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US9799755B2Oct 24, 2017
Method for manufacturing memory device and method for manufacturing shallow trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12568691B2Mar 3, 2026
BCD device layout area defined by a deep trench isolation structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507484B2Dec 23, 2025
BCD device layout area defined by a deep trench isolation structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402378B2Aug 26, 2025
Semiconductor arrangement including first and second gate electrodes and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266577B2Apr 1, 2025
Deep trench isolation structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211906B2Jan 28, 2025
Method for eliminating divot formation and semiconductor device manufactured using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165955B2Dec 10, 2024
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11894425B2Feb 6, 2024
Semiconductor arrangement and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854942B2Dec 26, 2023
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855071B2Dec 26, 2023
BCD device layout area defined by a deep trench isolation structure and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342025B2May 24, 2022
Non-volatile memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189546B2Nov 30, 2021
Semiconductor arrangement and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024637B2Jun 1, 2021
Embedded non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10290722B2May 14, 2019
Memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12114503B2Oct 8, 2024
Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10204917B2Feb 12, 2019
Method for manufacturing embedded non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12471329B2Nov 11, 2025
Semiconductor structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11798836B2Oct 24, 2023
Semiconductor isolation structure and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10879342B2Dec 29, 2020
Multi-terminal inductor for integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10720214B2Jul 21, 2020
Non-volatile memory device and method for controlling the non-volatile memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10505015B2Dec 10, 2019
Memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9589831B2Mar 7, 2017
Mechanisms for forming radio frequency (RF) area of integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9230988B2Jan 5, 2016
Mechanisms for forming radio frequency (RF) area of integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
UNITED MICROELECTRONICS CORP
7 patentsUS11682726B2Jun 20, 2023
High voltage semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP2 citations72
US11404305B1Aug 2, 2022
Manufacturing method of isolation structures for semiconductor devices
UNITED MICROELECTRONICS CORP4 citations71
US12002883B2Jun 4, 2024
Semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP2 citations70
US12206020B2Jan 21, 2025
High voltage semiconductor device
UNITED MICROELECTRONICS CORP0 citations62
US12080794B2Sep 3, 2024
Manufacturing method of high voltage semiconductor device
UNITED MICROELECTRONICS CORP0 citations62
US12279446B2Apr 15, 2025
Manufacturing method of semiconductor device
UNITED MICROELECTRONICS CORP0 citations60
US11515404B2Nov 29, 2022
Semiconductor structure comprising regions having an isolation trench with a stepped bottom surface therebetween and method of forming the same
UNITED MICROELECTRONICS CORP0 citations50
LEXTAR ELECTRONICS CORP
2 patentsTAIWAN SEMICONDUCTOR MFG
2 patentsUNIV NAT CHUNG CHENG
1 patentCHUMPOWER MACHINERY CORP
1 patentINNOLUX CORP
1 patentShowing the top 50 of 66 patents by PatentIndex Score.