P

Inventor

YANG TSUNG-YU

TW66 patents
⚠️ This page may combine multiple inventors who share the name “YANG TSUNG-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

36 patents
US11031303B1Jun 8, 2021

Deep trench isolation structure and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10128259B1Nov 13, 2018

Method for manufacturing embedded memory using high-K-metal-gate (HKMG) technology

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9269591B2Feb 23, 2016

Handle wafer for high resistivity trap-rich SOI

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US10475877B1Nov 12, 2019

Multi-terminal inductor for integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US11575008B2Feb 7, 2023

Semiconductor arrangement and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450574B2Sep 20, 2022

Deep trench isolation structure and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10840333B2Nov 17, 2020

Semiconductor arrangement and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10269909B1Apr 23, 2019

Memory device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10170488B1Jan 1, 2019

Non-volatile memory of semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11670689B2Jun 6, 2023

Method for eliminating divot formation and semiconductor device manufactured using the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11532637B2Dec 20, 2022

Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10879257B2Dec 29, 2020

Integrated chip having a logic gate electrode and a tunnel dielectric layer

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10672860B2Jun 2, 2020

Multi-terminal inductor for integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US9799755B2Oct 24, 2017

Method for manufacturing memory device and method for manufacturing shallow trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12568691B2Mar 3, 2026

BCD device layout area defined by a deep trench isolation structure and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507484B2Dec 23, 2025

BCD device layout area defined by a deep trench isolation structure and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402378B2Aug 26, 2025

Semiconductor arrangement including first and second gate electrodes and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266577B2Apr 1, 2025

Deep trench isolation structure and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211906B2Jan 28, 2025

Method for eliminating divot formation and semiconductor device manufactured using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12165955B2Dec 10, 2024

Semiconductor arrangement and method for making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11894425B2Feb 6, 2024

Semiconductor arrangement and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854942B2Dec 26, 2023

Semiconductor arrangement and method for making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855071B2Dec 26, 2023

BCD device layout area defined by a deep trench isolation structure and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342025B2May 24, 2022

Non-volatile memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11189546B2Nov 30, 2021

Semiconductor arrangement and method for making

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024637B2Jun 1, 2021

Embedded non-volatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10290722B2May 14, 2019

Memory device and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12114503B2Oct 8, 2024

Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10204917B2Feb 12, 2019

Method for manufacturing embedded non-volatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12471329B2Nov 11, 2025

Semiconductor structures and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11798836B2Oct 24, 2023

Semiconductor isolation structure and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10879342B2Dec 29, 2020

Multi-terminal inductor for integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10720214B2Jul 21, 2020

Non-volatile memory device and method for controlling the non-volatile memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10505015B2Dec 10, 2019

Memory device and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9589831B2Mar 7, 2017

Mechanisms for forming radio frequency (RF) area of integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9230988B2Jan 5, 2016

Mechanisms for forming radio frequency (RF) area of integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

UNITED MICROELECTRONICS CORP

7 patents

LEXTAR ELECTRONICS CORP

2 patents

TAIWAN SEMICONDUCTOR MFG

2 patents

UNIV NAT CHUNG CHENG

1 patent

CHUMPOWER MACHINERY CORP

1 patent

INNOLUX CORP

1 patent

Showing the top 50 of 66 patents by PatentIndex Score.