Inventor

CHUANG MING-YEH

US27 patents

⚠️ This page may combine multiple inventors who share the name “CHUANG MING-YEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHUANG MING-YEH

TEXAS INSTRUMENTS INC

Laterally diffused metal oxide semiconductor with segmented gate oxide

FinFET with lateral charge balance at the drain drift region

LDMOS transistor with segmented gate dielectric layer

Uniform implant regions in a semiconductor ridge of a FinFET

Dual metal Schottky diode

Implant blocking for a trench or FinFET without an additional mask

Low resistive source/backgate finFET

Uniform implant regions in a semiconductor ridge of a FinfET

Fin field effect transistor with field plating

finFET with lateral charge balance at the drain drift region

Fin field effect transistor with merged drift region

Fin field effect transistor with field plating

LDMOS transistor with gate structure having alternating regions of wider and narrower spacing to a body region

Transistor with field plate over tapered trench isolation

Transistor with field plate over tapered trench isolation

Fin field-effect transistor (FinFET) with a high-K material field-plating

Diode having a double implanted guard ring

Fin field-effect transistor semiconductor device and method of forming the same

Bird&#39;s beak profile of field oxide region

Collector tailored structures for integration of binary junction transistors

Trench isolated IC with transistors having LOCOS gate dielectric

Trench isolated IC with transistors having locos gate dielectric

Making ESD diode with P-S/D overlying N-well and P-EPI portion

CHUANG MING-YEH

ESD diode with PSD partially overlying P-Epi circumferential of PSD

Low temperature implant scheme to improve BJT current gain

TIAN WEIDONG

Fluorine implant under isolation dielectric structures to improve bipolar transistor performance and matching

TEXAS INSTR INCOPRORATED

Method of manufacturing a dual metal Schottky diode

Bird's beak profile of field oxide region