P

Inventor

Lutker-Lee Katie

US20 patents

Patents

20 patents
US10304725B2May 28, 2019

Manufacturing methods to protect ULK materials from damage during etch processing to obtain desired features

TOKYO ELECTRON LTD2 citations72
US9818610B2Nov 14, 2017

Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)

TOKYO ELECTRON LTD4 citations70
US9607834B2Mar 28, 2017

Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)

TOKYO ELECTRON LTD5 citations70
US12469701B2Nov 11, 2025

Patterning features with metal based resists

TOKYO ELECTRON LTD0 citations62
US12100591B2Sep 24, 2024

Photoactive metal-based hard mask integration

TOKYO ELECTRON LTD0 citations62
US12506005B2Dec 23, 2025

Methods and structures for increasing stability of soft or organic features

TOKYO ELECTRON LTD0 citations61
US12334391B2Jun 17, 2025

Method for patterning a substrate using photolithography

TOKYO ELECTRON LTD0 citations61
US11978631B2May 7, 2024

Forming contact holes with controlled local critical dimension uniformity

TOKYO ELECTRON LTD1 citations61
US11882776B2Jan 23, 2024

In-situ encapsulation of metal-insulator-metal (MIM) stacks for resistive random access memory (RERAM) cells

TOKYO ELECTRON LTD0 citations61
US12009211B2Jun 11, 2024

Method for highly anisotropic etching of titanium oxide spacer using selective top-deposition

TOKYO ELECTRON LTD0 citations58
US11837471B2Dec 5, 2023

Methods of patterning small features

TOKYO ELECTRON LTD1 citations57
US12581921B2Mar 17, 2026

Multiple patterning with selective mandrel formation

TOKYO ELECTRON LTD0 citations51
US12322597B2Jun 3, 2025

Pitch scaling in microfabrication

TOKYO ELECTRON LTD0 citations51
US11621164B2Apr 4, 2023

Method for critical dimension (CD) trim of an organic pattern used for multi-patterning purposes

TOKYO ELECTRON LTD0 citations51
US11410852B2Aug 9, 2022

Protective layers and methods of formation during plasma etching processes

TOKYO ELECTRON LTD0 citations51
US12438006B2Oct 7, 2025

Metal hard mask integration

TOKYO ELECTRON LTD0 citations50
US11756790B2Sep 12, 2023

Method for patterning a dielectric layer

TOKYO ELECTRON LTD0 citations50
US11361993B2Jun 14, 2022

Method for inverse via patterning for back end of line dual damascene structures

TOKYO ELECTRON LTD0 citations50
US12451354B2Oct 21, 2025

Double patterning method of patterning a substrate

TOKYO ELECTRON LTD0 citations48
US12451353B2Oct 21, 2025

Double hardmasks for self-aligned multi-patterning processes

TOKYO ELECTRON LTD0 citations45