Inventor

HEGDE GANESH

US20 patents

⚠️ This page may combine multiple inventors who share the name “HEGDE GANESH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HEGDE GANESH

SAMSUNG ELECTRONICS CO LTD

Structure and method to achieve compressively strained Si NS

Method and system for providing a reverse-engineering resistant hardware embedded security module

Fabricating metal source-drain stressor in a MOS device channel

Low resistivity damascene interconnect

Electronic and atomic structure computation utilizing machine learning

Generative structure-property inverse computational co-design of materials

Low resistivity interconnects with doped barrier layer for integrated circuits

Method of screening materials using forward conducting modes

Interconnects having long grains and methods of manufacturing the same

Method and system for providing a reverse engineering resistant hardware embedded security module

Interconnects having long grains and methods of manufacturing the same

Method of providing reacted metal source-drain stressors for tensile channel stress

Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same

Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same

PURDUE RESEARCH FOUNDATION

Physical modeling of electronic devices/systems

Physical modeling of electronic devices/systems

Physical modeling of electronic devices/systems

KITTL JORGE A

Structure and method to achieve large strain in NS without addition of stack-generated defects

Methods of forming semiconductor devices including conductive contacts on source/drains

INCONTACT INC

System and method for reconnecting an inbound originated call