Inventor
HUANG KUO-CHING
TW110 patents
⚠️ This page may combine multiple inventors who share the name “HUANG KUO-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
32 patentsUS6165880ADec 26, 2000
Double spacer technology for making self-aligned contacts (SAC) on semiconductor integrated circuits
TAIWAN SEMICONDUCTOR MFG186 citations99
US6162686ADec 19, 2000
Method for forming a fuse in integrated circuit application
TAIWAN SEMICONDUCTOR MFG87 citations98
US6080637AJun 27, 2000
Shallow trench isolation technology to eliminate a kink effect
TAIWAN SEMICONDUCTOR MFG88 citations98
US6037222AMar 14, 2000
Method for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technology
TAIWAN SEMICONDUCTOR MFG148 citations98
US8869436B2Oct 28, 2014
Resistive switching random access memory structure and method to recreate filament and recover resistance window
TAIWAN SEMICONDUCTOR MFG40 citations94
US6420226B1Jul 16, 2002
Method of defining a buried stack capacitor structure for a one transistor RAM cell
TAIWAN SEMICONDUCTOR MFG38 citations93
US6351016B1Feb 26, 2002
Technology for high performance buried contact and tungsten polycide gate integration
TAIWAN SEMICONDUCTOR MFG19 citations93
US6194234B1Feb 27, 2001
Method to evaluate hemisperical grain (HSG) polysilicon surface
TAIWAN SEMICONDUCTOR MFG23 citations93
US6103455AAug 15, 2000
Method to form a recess free deep contact
TAIWAN SEMICONDUCTOR MFG22 citations93
US6027969AFeb 22, 2000
Capacitor structure for a dynamic random access memory cell
TAIWAN SEMICONDUCTOR MFG35 citations93
US6015734AJan 18, 2000
Method for improving the yield on dynamic random access memory (DRAM) with cylindrical capacitor structures
TAIWAN SEMICONDUCTOR MFG23 citations93
US6833578B1Dec 21, 2004
Method and structure improving isolation between memory cell passing gate and capacitor
TAIWAN SEMICONDUCTOR MFG23 citations92
US6638813B1Oct 28, 2003
Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell
TAIWAN SEMICONDUCTOR MFG33 citations92
US6403416B1Jun 11, 2002
Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)
TAIWAN SEMICONDUCTOR MFG29 citations92
US6373369B2Apr 16, 2002
High efficiency thin film inductor
TAIWAN SEMICONDUCTOR MFG30 citations92
US6307213B1Oct 23, 2001
Method for making a fuse structure for improved repaired yields on semiconductor memory devices
TAIWAN SEMICONDUCTOR MFG31 citations92
US6287939B1Sep 11, 2001
Method for fabricating a shallow trench isolation which is not susceptible to buried contact trench formation
TAIWAN SEMICONDUCTOR MFG25 citations92
US6214715B1Apr 10, 2001
Method for fabricating a self aligned contact which eliminates the key hole problem using a two step spacer deposition
TAIWAN SEMICONDUCTOR MFG37 citations92
US6121073ASep 19, 2000
Method for making a fuse structure for improved repaired yields on semiconductor memory devices
TAIWAN SEMICONDUCTOR MFG40 citations92
US6248673B1Jun 19, 2001
Hydrogen thermal annealing method for stabilizing microelectronic devices
TAIWAN SEMICONDUCTOR MFG30 citations91
US6661043B1Dec 9, 2003
One-transistor RAM approach for high density memory application
TAIWAN SEMICONDUCTOR MFG27 citations89
US9019743B2Apr 28, 2015
Method and structure for resistive switching random access memory with high reliable and high density
TAIWAN SEMICONDUCTOR MFG15 citations84
US7847847B2Dec 7, 2010
Structure for CMOS image sensor with a plurality of capacitors
TAIWAN SEMICONDUCTOR MFG7 citations74
US6433665B2Aug 13, 2002
High efficiency thin film inductor
TAIWAN SEMICONDUCTOR MFG9 citations74
US6278352B1Aug 21, 2001
High efficiency thin film inductor
TAIWAN SEMICONDUCTOR MFG12 citations74
US6271570B1Aug 7, 2001
Trench-free buried contact
TAIWAN SEMICONDUCTOR MFG6 citations74
US6174802B1Jan 16, 2001
Method for fabricating a self aligned contact which eliminates the key hole problem using a two step contact deposition
TAIWAN SEMICONDUCTOR MFG7 citations74
US6110822AAug 29, 2000
Method for forming a polysilicon-interconnect contact in a TFT-SRAM
TAIWAN SEMICONDUCTOR MFG15 citations74
US6078087AJun 20, 2000
SRAM memory device with improved performance
TAIWAN SEMICONDUCTOR MFG6 citations74
US5998269ADec 7, 1999
Technology for high performance buried contact and tungsten polycide gate integration
TAIWAN SEMICONDUCTOR MFG10 citations74
US5953606ASep 14, 1999
Method for manufacturing a TFT SRAM memory device with improved performance
TAIWAN SEMICONDUCTOR MFG7 citations74
US9361980B1Jun 7, 2016
RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltages
TAIWAN SEMICONDUCTOR MFG6 citations73
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS10700070B2Jun 30, 2020
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10103151B2Oct 16, 2018
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9634134B2Apr 25, 2017
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9230647B2Jan 5, 2016
Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10985316B2Apr 20, 2021
Bottom electrode structure in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US10748907B2Aug 18, 2020
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10461126B2Oct 29, 2019
Memory circuit and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10262731B2Apr 16, 2019
Device and method for forming resistive random access memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9991368B2Jun 5, 2018
Vertical BJT for high density memory
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9893122B2Feb 13, 2018
Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9613965B2Apr 4, 2017
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9178040B2Nov 3, 2015
Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
HIGH TECH COMP CORP
1 patentTAIWAN SEMICONDCUTOR MFG COMPANY LTD
1 patentTAIWAN SEMICONDUCTOR MANUFATUR
1 patentHUANG CHE-HUNG
1 patentFU CHI-CHANG
1 patentPRIMAX ELECTRONICS LTD
1 patentShowing the top 50 of 110 patents by PatentIndex Score.