P

Inventor

HUANG KUO-CHING

TW110 patents
⚠️ This page may combine multiple inventors who share the name “HUANG KUO-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

32 patents
US6165880ADec 26, 2000

Double spacer technology for making self-aligned contacts (SAC) on semiconductor integrated circuits

TAIWAN SEMICONDUCTOR MFG186 citations99
US6162686ADec 19, 2000

Method for forming a fuse in integrated circuit application

TAIWAN SEMICONDUCTOR MFG87 citations98
US6080637AJun 27, 2000

Shallow trench isolation technology to eliminate a kink effect

TAIWAN SEMICONDUCTOR MFG88 citations98
US6037222AMar 14, 2000

Method for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technology

TAIWAN SEMICONDUCTOR MFG148 citations98
US8869436B2Oct 28, 2014

Resistive switching random access memory structure and method to recreate filament and recover resistance window

TAIWAN SEMICONDUCTOR MFG40 citations94
US6420226B1Jul 16, 2002

Method of defining a buried stack capacitor structure for a one transistor RAM cell

TAIWAN SEMICONDUCTOR MFG38 citations93
US6351016B1Feb 26, 2002

Technology for high performance buried contact and tungsten polycide gate integration

TAIWAN SEMICONDUCTOR MFG19 citations93
US6194234B1Feb 27, 2001

Method to evaluate hemisperical grain (HSG) polysilicon surface

TAIWAN SEMICONDUCTOR MFG23 citations93
US6103455AAug 15, 2000

Method to form a recess free deep contact

TAIWAN SEMICONDUCTOR MFG22 citations93
US6027969AFeb 22, 2000

Capacitor structure for a dynamic random access memory cell

TAIWAN SEMICONDUCTOR MFG35 citations93
US6015734AJan 18, 2000

Method for improving the yield on dynamic random access memory (DRAM) with cylindrical capacitor structures

TAIWAN SEMICONDUCTOR MFG23 citations93
US6833578B1Dec 21, 2004

Method and structure improving isolation between memory cell passing gate and capacitor

TAIWAN SEMICONDUCTOR MFG23 citations92
US6638813B1Oct 28, 2003

Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell

TAIWAN SEMICONDUCTOR MFG33 citations92
US6403416B1Jun 11, 2002

Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)

TAIWAN SEMICONDUCTOR MFG29 citations92
US6373369B2Apr 16, 2002

High efficiency thin film inductor

TAIWAN SEMICONDUCTOR MFG30 citations92
US6307213B1Oct 23, 2001

Method for making a fuse structure for improved repaired yields on semiconductor memory devices

TAIWAN SEMICONDUCTOR MFG31 citations92
US6287939B1Sep 11, 2001

Method for fabricating a shallow trench isolation which is not susceptible to buried contact trench formation

TAIWAN SEMICONDUCTOR MFG25 citations92
US6214715B1Apr 10, 2001

Method for fabricating a self aligned contact which eliminates the key hole problem using a two step spacer deposition

TAIWAN SEMICONDUCTOR MFG37 citations92
US6121073ASep 19, 2000

Method for making a fuse structure for improved repaired yields on semiconductor memory devices

TAIWAN SEMICONDUCTOR MFG40 citations92
US6248673B1Jun 19, 2001

Hydrogen thermal annealing method for stabilizing microelectronic devices

TAIWAN SEMICONDUCTOR MFG30 citations91
US6661043B1Dec 9, 2003

One-transistor RAM approach for high density memory application

TAIWAN SEMICONDUCTOR MFG27 citations89
US9019743B2Apr 28, 2015

Method and structure for resistive switching random access memory with high reliable and high density

TAIWAN SEMICONDUCTOR MFG15 citations84
US7847847B2Dec 7, 2010

Structure for CMOS image sensor with a plurality of capacitors

TAIWAN SEMICONDUCTOR MFG7 citations74
US6433665B2Aug 13, 2002

High efficiency thin film inductor

TAIWAN SEMICONDUCTOR MFG9 citations74
US6278352B1Aug 21, 2001

High efficiency thin film inductor

TAIWAN SEMICONDUCTOR MFG12 citations74
US6271570B1Aug 7, 2001

Trench-free buried contact

TAIWAN SEMICONDUCTOR MFG6 citations74
US6174802B1Jan 16, 2001

Method for fabricating a self aligned contact which eliminates the key hole problem using a two step contact deposition

TAIWAN SEMICONDUCTOR MFG7 citations74
US6110822AAug 29, 2000

Method for forming a polysilicon-interconnect contact in a TFT-SRAM

TAIWAN SEMICONDUCTOR MFG15 citations74
US6078087AJun 20, 2000

SRAM memory device with improved performance

TAIWAN SEMICONDUCTOR MFG6 citations74
US5998269ADec 7, 1999

Technology for high performance buried contact and tungsten polycide gate integration

TAIWAN SEMICONDUCTOR MFG10 citations74
US5953606ASep 14, 1999

Method for manufacturing a TFT SRAM memory device with improved performance

TAIWAN SEMICONDUCTOR MFG7 citations74
US9361980B1Jun 7, 2016

RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltages

TAIWAN SEMICONDUCTOR MFG6 citations73

TAIWAN SEMICONDUCTOR MFG CO LTD

12 patents

HIGH TECH COMP CORP

1 patent

TAIWAN SEMICONDCUTOR MFG COMPANY LTD

1 patent

TAIWAN SEMICONDUCTOR MANUFATUR

1 patent

HUANG CHE-HUNG

1 patent

FU CHI-CHANG

1 patent

PRIMAX ELECTRONICS LTD

1 patent

Showing the top 50 of 110 patents by PatentIndex Score.