Inventor
BEYER KLAUS D
US27 patents
⚠️ This page may combine multiple inventors who share the name “BEYER KLAUS D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
26 patentsUS5391911AFeb 21, 1995
Reach-through isolation silicon-on-insulator device
IBM138 citations98
US5234535AAug 10, 1993
Method of producing a thin silicon-on-insulator layer
IBM197 citations98
US4671851AJun 9, 1987
Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
IBM189 citations98
US5405795AApr 11, 1995
Method of forming a SOI transistor having a self-aligned body contact
IBM110 citations97
US4944836AJul 31, 1990
Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
IBM539 citations97
US5444015AAug 22, 1995
Larce scale IC personalization method employing air dielectric structure for extended conductors
IBM77 citations96
US5366923ANov 22, 1994
Bonded wafer structure having a buried insulation layer
IBM54 citations96
US5313094AMay 17, 1994
Thermal dissipation of integrated circuits using diamond paths
IBM134 citations96
US5098856AMar 24, 1992
Air-filled isolation trench with chemically vapor deposited silicon dioxide cap
IBM102 citations96
US4758531AJul 19, 1988
Method of making defect free silicon islands using SEG
IBM100 citations96
US4745081AMay 17, 1988
Method of trench filling
IBM67 citations96
US4528047AJul 9, 1985
Method for forming a void free isolation structure utilizing etch and refill techniques
IBM105 citations96
US6498383B2Dec 24, 2002
Oxynitride shallow trench isolation and method of formation
IBM49 citations95
US5227658AJul 13, 1993
Buried air dielectric isolation of silicon islands
IBM63 citations95
US6764922B2Jul 20, 2004
Method of formation of an oxynitride shallow trench isolation
IBM22 citations92
US6709951B2Mar 23, 2004
Oxynitride shallow trench isolation and method of formation
IBM15 citations92
US5530290AJun 25, 1996
Large scale IC personalization method employing air dielectric structure for extended conductor
IBM22 citations92
US5306659AApr 26, 1994
Reach-through isolation etching method for silicon-on-insulator devices
IBM23 citations92
US5264387ANov 23, 1993
Method of forming uniformly thin, isolated silicon mesas on an insulating substrate
IBM27 citations92
US5232866AAug 3, 1993
Isolated films using an air dielectric
IBM48 citations92
US4924284AMay 8, 1990
Method of trench filling
IBM41 citations92
US4264374AApr 28, 1981
Cleaning process for p-type silicon surface
IBM56 citations91
US4069068AJan 17, 1978
Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions
IBM28 citations80
US6602759B2Aug 5, 2003
Shallow trench isolation for thin silicon/silicon-on-insulator substrates by utilizing polysilicon
IBM7 citations74
US4333794AJun 8, 1982
Omission of thick Si3 N4 layers in ISA schemes
IBM20 citations74
US6825097B2Nov 30, 2004
Triple oxide fill for trench isolation
IBM5 citations59