P

Inventor

LOWELL JOHN K

US10 patents

Patents

10 patents
US5778039AJul 7, 1998

Method and apparatus for the detection of light elements on the surface of a semiconductor substrate using x-ray fluorescence (XRF)

ADVANCED MICRO DEVICES INC141 citations97
US5963783AOct 5, 1999

In-line detection and assessment of net charge in PECVD silicon dioxide (oxide) layers

ADVANCED MICRO DEVICES INC52 citations96
US5907764AMay 25, 1999

In-line detection and assessment of net charge in PECVD silicon dioxide (oxide) layers

ADVANCED MICRO DEVICES INC25 citations92
US5657363AAug 12, 1997

Method and apparatus for determining the thickness and elemental composition of a thin film using radioisotopic X-ray fluorescence (RXRF)

ADVANCED MICRO DEVICES INC43 citations92
US5581194ADec 3, 1996

Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage

ADVANCED MICRO DEVICES INC38 citations92
US5804981ASep 8, 1998

Method of detecting heavy metal impurities introduced into a silicon wafer during ion implantation

ADVANCED MICRO DEVICES INC31 citations86
US5557409ASep 17, 1996

Characterization of an external silicon interface using optical second harmonic generation

ADVANCED MICRO DEVICES INC39 citations84
US5471293ANov 28, 1995

Method and device for determining defects within a crystallographic substrate

ADVANCED MICRO DEVICES INC19 citations77
US5891743AApr 6, 1999

Method of forming buried oxygen layer using MeV ion implantation

ADVANCED MICRO DEVICES INC6 citations62
US6190518B1Feb 20, 2001

Device for reducing plasma etch damage and method for manufacturing same

ADVANCED MICRO DEVICES INC6 citations56