Inventor
LIU CHIA WEN
TW30 patents
⚠️ This page may combine multiple inventors who share the name “LIU CHIA WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS9564431B2Feb 7, 2017
Semiconductor structures and methods for multi-level work function
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9224814B2Dec 29, 2015
Process design to improve transistor variations and performance
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10672742B2Jun 2, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11145762B2Oct 12, 2021
Multi-gate device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10008603B2Jun 26, 2018
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9929245B2Mar 27, 2018
Semiconductor structures and methods for multi-level work function
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9484460B2Nov 1, 2016
Semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11152338B2Oct 19, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10276664B2Apr 30, 2019
Semiconductor structures and methods for multi-dimension of nanowire diameter to improve drive current
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9728602B2Aug 8, 2017
Variable channel strain of nanowire transistors to improve drive current
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9716172B2Jul 25, 2017
Semiconductor device having multiple active area layers and its formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9634132B2Apr 25, 2017
Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive current
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9620591B2Apr 11, 2017
Semiconductor structures and methods for multi-level work function and multi-valued channel doping of nanowire transistors to improve drive current
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US9536746B2Jan 3, 2017
Recess and epitaxial layer to improve transistor performance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9236445B2Jan 12, 2016
Transistor having replacement gate and epitaxially grown replacement channel region
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11955554B2Apr 9, 2024
Method of fabricating a multi-gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11393926B2Jul 19, 2022
Multi-gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10734503B2Aug 4, 2020
Asymmetric semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10026826B2Jul 17, 2018
Method of forming semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9837533B2Dec 5, 2017
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9768297B2Sep 19, 2017
Process design to improve transistor variations and performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9653545B2May 16, 2017
MOSFET structure with T-shaped epitaxial silicon channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9525031B2Dec 20, 2016
Epitaxial channel
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US9660049B2May 23, 2017
Semiconductor transistor device with dopant profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42