Inventor
SAHARA MASASHI
JP34 patents
⚠️ This page may combine multiple inventors who share the name “SAHARA MASASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
14 patentsUS5904556AMay 18, 1999
Method for making semiconductor integrated circuit device having interconnection structure using tungsten film
HITACHI LTD63 citations95
US6583049B2Jun 24, 2003
Semiconductor integrated circuit device and method for making the same
HITACHI LTD13 citations92
US6503803B2Jan 7, 2003
Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer
HITACHI LTD16 citations92
US6031288AFeb 29, 2000
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
HITACHI LTD36 citations92
US6429476B2Aug 6, 2002
Semiconductor integrated circuit device
HITACHI LTD27 citations91
US7064437B2Jun 20, 2006
Semiconductor device having aluminum conductors
HITACHI LTD5 citations74
US6476492B2Nov 5, 2002
Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten
HITACHI LTD5 citations74
US6472754B2Oct 29, 2002
Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector
HITACHI LTD13 citations74
US6300237B1Oct 9, 2001
Semiconductor integrated circuit device and method for making the same
HITACHI LTD7 citations73
US6268658B1Jul 31, 2001
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof
HITACHI LTD10 citations73
US6617691B2Sep 9, 2003
Semiconductor device
HITACHI LTD4 citations63
US6548904B2Apr 15, 2003
Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum
HITACHI LTD4 citations63
US6545362B2Apr 8, 2003
Semiconductor device and method of manufacturing the same
HITACHI LTD1 citations52
US6538329B2Mar 25, 2003
Semiconductor integrated circuit device and method for making the same
HITACHI LTD0 citations51
RENESAS TECH CORP
13 patentsUS6897570B2May 24, 2005
Semiconductor device and method of manufacturing same
RENESAS TECH CORP54 citations95
US6780757B2Aug 24, 2004
Semiconductor integrated circuit device and method for making the same
RENESAS TECH CORP17 citations92
US7759804B2Jul 20, 2010
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP20 citations91
US7342302B2Mar 11, 2008
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP20 citations91
US7504297B2Mar 17, 2009
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP15 citations84
US7705462B2Apr 27, 2010
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP8 citations83
US7615848B2Nov 10, 2009
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP8 citations83
US6856021B1Feb 15, 2005
Semiconductor device having aluminum alloy conductors
RENESAS TECH CORP5 citations74
US7400046B2Jul 15, 2008
Semiconductor device with guard rings that are formed in each of the plural wiring layers
RENESAS TECH CORP6 citations73
US7303986B2Dec 4, 2007
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP6 citations73
US7750427B2Jul 6, 2010
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP0 citations52
US7241685B2Jul 10, 2007
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP1 citations52
US6784549B2Aug 31, 2004
Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum
RENESAS TECH CORP0 citations52
HITACHI ULSI SYS CO LTD
3 patentsUS7102223B1Sep 5, 2006
Semiconductor device and a method of manufacturing the same
HITACHI ULSI SYS CO LTD38 citations95
US7189637B2Mar 13, 2007
Method of manufacturing a semiconductor device having a multi-layered wiring structure
HITACHI ULSI SYS CO LTD9 citations73
US7132341B2Nov 7, 2006
Semiconductor integrated circuit device and the process of the same
HITACHI ULSI SYS CO LTD1 citations51