Inventor
YANG HAO-I
TW31 patents
⚠️ This page may combine multiple inventors who share the name “YANG HAO-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS10340897B2Jul 2, 2019
Clock generating circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11323101B2May 3, 2022
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11133039B2Sep 28, 2021
Power switch control in a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10951200B2Mar 16, 2021
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10574213B2Feb 25, 2020
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11734142B2Aug 22, 2023
Scan synchronous-write-through testing architectures for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11256588B2Feb 22, 2022
Scan synchronous-write-through testing architectures for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9721651B2Aug 1, 2017
Write driver and level shifter having shared transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9484084B2Nov 1, 2016
Pulling devices for driving data lines
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US11677387B2Jun 13, 2023
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12436858B2Oct 7, 2025
Scan synchronous-write-through testing architectures for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10705934B2Jul 7, 2020
Scan synchronous-write-through testing architectures for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US9299391B2Mar 29, 2016
Three-dimensional wordline sharing memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations60
US10276232B2Apr 30, 2019
Read margin tracking in memory applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9934845B2Apr 3, 2018
Latch with built-in level shifter
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10121520B2Nov 6, 2018
Memory array and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9959911B2May 1, 2018
Memory array and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9711209B2Jul 18, 2017
Three-dimensional wordline sharing memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9583494B2Feb 28, 2017
Apparatus and method for integrated circuit bit line sharing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
CHUANG CHING-TE
5 patentsUS8320164B2Nov 27, 2012
Static random access memory with data controlled power supply
CHUANG CHING-TE21 citations90
US8804445B2Aug 12, 2014
Oscillato based on a 6T SRAM for measuring the bias temperature instability
CHUANG CHING-TE7 citations82
US8659936B2Feb 25, 2014
Low power static random access memory
CHUANG CHING-TE13 citations82
US8259510B2Sep 4, 2012
Disturb-free static random access memory cell
CHUANG CHING-TE4 citations59
US8854897B2Oct 7, 2014
Static random access memory apparatus and bit-line voltage controller thereof
CHUANG CHING-TE0 citations48
CHIU YI-TE
2 patentsUNIV NAT CHIAO TUNG
2 patentsUS8385149B2Feb 26, 2013
Gate oxide breakdown-withstanding power switch structure
UNIV NAT CHIAO TUNG5 citations73
US8773894B2Jul 8, 2014
Static random access memory with ripple bit lines/search lines for improving current leakage/variation tolerance and density/performance
UNIV NAT CHIAO TUNG0 citations36