Inventor

HYUN JAE-WOONG

KR31 patents

⚠️ This page may combine multiple inventors who share the name “HYUN JAE-WOONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HYUN JAE-WOONG

SAMSUNG ELECTRONICS CO LTD

Non-volatile memory device and method of manufacturing the same

Fin-FET having GAA structure and methods of fabricating the same

Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions

Multi-level cell memory devices using trellis coded modulation and methods of storing data in and reading data from the memory devices

Memory cell programming method and semiconductor device for simultaneously programming a plurality of memory block groups

Multi-bit nonvolatile memory devices and methods of operating the same

Non-volatile memory devices and method thereof

Semiconductor device

Nonvolatile memory devices and data reading methods

Method of writing/reading data into/from memory cell and page buffer using different codes for writing and reading operations

Non-volatile memory devices and methods of operating the same

Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices

Nonvolatile memory device and method of operating and fabricating the same

Capacitorless DRAM having a hole reserving unit

Method of manufacturing a non-volatile memory device

Non-volatile semiconductor device

Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof

Memory cell programming methods capable of reducing coupling effects

Memory device having molecular adsorption layer

Methods of operating a non-volatile memory device

Non-volatile memory device including block state confirmation cell and method of operating the same

Methods of operating nonvolatile memory devices

Nonvolatile memory device and method of operating and fabricating the same

Methods of operating nonvolatile memory devices

Method of operating a semiconductor memory device having a recessed control gate electrode

Method of fabricating non-volatile memory device

Method of programming multi-level semiconductor memory device and multi-level semiconductor memory device

Semiconductor memory device having metal-insulator transition film resistor

Pattern recognition type optical memory and optical read/write device and method for reading and writing data from or to the memory

KONG JUN JIN

Multi-level cell memory devices and methods of storing data in and reading data from the memory devices

SAMSUNG ELECRONICS CO LTD

Non-volatile memory device and method of operating the same