Inventor
OTSUKI HAYASHI
JP24 patents
⚠️ This page may combine multiple inventors who share the name “OTSUKI HAYASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
22 patentsUS6861356B2Mar 1, 2005
Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
TOKYO ELECTRON LTD245 citations99
US5474641ADec 12, 1995
Processing method and apparatus thereof
TOKYO ELECTRON LTD57 citations96
US7879179B2Feb 1, 2011
Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
TOKYO ELECTRON LTD22 citations92
US7846291B2Dec 7, 2010
Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
TOKYO ELECTRON LTD36 citations92
US7511814B2Mar 31, 2009
Particle-measuring system and particle-measuring method
TOKYO ELECTRON LTD10 citations92
US6919273B1Jul 19, 2005
Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film
TOKYO ELECTRON LTD21 citations92
US6838376B2Jan 4, 2005
Method of forming semiconductor wiring structures
TOKYO ELECTRON LTD27 citations92
US6532069B1Mar 11, 2003
Particle-measuring system and particle-measuring method
TOKYO ELECTRON LTD25 citations92
US7931945B2Apr 26, 2011
Film forming method
TOKYO ELECTRON LTD8 citations84
US7667840B2Feb 23, 2010
Particle-measuring system and particle-measuring method
TOKYO ELECTRON LTD9 citations84
US7515264B2Apr 7, 2009
Particle-measuring system and particle-measuring method
TOKYO ELECTRON LTD9 citations84
US7829144B2Nov 9, 2010
Method of forming a metal film for electrode
TOKYO ELECTRON LTD7 citations74
US6824825B2Nov 30, 2004
Method for depositing metallic nitride series thin film
TOKYO ELECTRON LTD12 citations74
US7894059B2Feb 22, 2011
Film formation processing apparatus and method for determining an end-point of a cleaning process
TOKYO ELECTRON LTD6 citations73
US7484513B2Feb 3, 2009
Method of forming titanium film by CVD
TOKYO ELECTRON LTD6 citations73
US7153773B2Dec 26, 2006
TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
TOKYO ELECTRON LTD9 citations73
US6841203B2Jan 11, 2005
Method of forming titanium film by CVD
TOKYO ELECTRON LTD5 citations73
US6817381B2Nov 16, 2004
Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus
TOKYO ELECTRON LTD8 citations73
US6451388B1Sep 17, 2002
Method of forming titanium film by chemical vapor deposition
TOKYO ELECTRON LTD12 citations73
US6177149B1Jan 23, 2001
Method of forming titanium film by CVD
TOKYO ELECTRON LTD13 citations73
US7828016B2Nov 9, 2010
Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus
TOKYO ELECTRON LTD5 citations62
US7410923B2Aug 12, 2008
SiC material, semiconductor device fabricating system and SiC material forming method
TOKYO ELECTRON LTD2 citations62