Inventor
BESSER PAUL
US17 patents
⚠️ This page may combine multiple inventors who share the name “BESSER PAUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
11 patentsUS6830998B1Dec 14, 2004
Gate dielectric quality for replacement metal gate transistors
ADVANCED MICRO DEVICES INC75 citations98
US6365516B1Apr 2, 2002
Advanced cobalt silicidation with in-situ hydrogen plasma clean
ADVANCED MICRO DEVICES INC55 citations94
US7071086B2Jul 4, 2006
Method of forming a metal gate structure with tuning of work function by silicon incorporation
ADVANCED MICRO DEVICES INC32 citations92
US6461951B1Oct 8, 2002
Method of forming a sidewall spacer to prevent gouging of device junctions during interlayer dielectric etching including silicide growth over gate spacers
ADVANCED MICRO DEVICES INC37 citations92
US6258697B1Jul 10, 2001
Method of etching contacts with reduced oxide stress
ADVANCED MICRO DEVICES INC26 citations91
US6483153B1Nov 19, 2002
Method to improve LDD corner control with an in-situ film for local interconnect processing
ADVANCED MICRO DEVICES INC15 citations84
US6297148B1Oct 2, 2001
Method of forming a silicon bottom anti-reflective coating with reduced junction leakage during salicidation
ADVANCED MICRO DEVICES INC18 citations83
US6333218B1Dec 25, 2001
Method of etching contacts with reduced oxide stress
ADVANCED MICRO DEVICES INC15 citations82
US5936307AAug 10, 1999
Surface modification method for film stress reduction
ADVANCED MICRO DEVICES INC8 citations74
US6258683B1Jul 10, 2001
Local interconnection arrangement with reduced junction leakage and method of forming same
ADVANCED MICRO DEVICES INC11 citations73
US6927162B1Aug 9, 2005
Method of forming a contact in a semiconductor device with formation of silicide prior to plasma treatment
ADVANCED MICRO DEVICES INC7 citations72