P

Inventor

KIM DAHYE

KR43 patents
⚠️ This page may combine multiple inventors who share the name “KIM DAHYE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US11282995B2Mar 22, 2022

Display module package

SAMSUNG ELECTRONICS CO LTD2 citations73
US11264354B2Mar 1, 2022

Wafer level package

SAMSUNG ELECTRONICS CO LTD2 citations72
US12154988B2Nov 26, 2024

Multi-oxide-semiconductor field-effect transistor with stacked source/drain structure

SAMSUNG ELECTRONICS CO LTD2 citations71
US11094832B2Aug 17, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations71
US12328937B2Jun 10, 2025

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12256564B2Mar 18, 2025

Semiconductor device having a liner layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12094974B2Sep 17, 2024

Semiconductor devices and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11942586B2Mar 26, 2024

Display module package

SAMSUNG ELECTRONICS CO LTD0 citations62
US11894338B2Feb 6, 2024

Wafer level package

SAMSUNG ELECTRONICS CO LTD1 citations62
US11888028B2Jan 30, 2024

Semiconductor device having a liner layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11791400B2Oct 17, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11664453B2May 30, 2023

Semiconductor devices and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11626401B2Apr 11, 2023

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11532620B2Dec 20, 2022

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11417731B2Aug 16, 2022

Semiconductor device including a field effect transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11205649B2Dec 21, 2021

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11201087B2Dec 14, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12046682B2Jul 23, 2024

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US11710796B2Jul 25, 2023

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US11894371B2Feb 6, 2024

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD0 citations60
US11398475B2Jul 26, 2022

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD1 citations60
US12278271B2Apr 15, 2025

Semiconductor device having capping layers with different germanium concentrations over an active pattern

SAMSUNG ELECTRONICS CO LTD0 citations51
US12550392B2Feb 10, 2026

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US12507451B2Dec 23, 2025

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations50
US12490463B2Dec 2, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations50
US12446262B2Oct 14, 2025

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US12382685B2Aug 5, 2025

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US12538521B2Jan 27, 2026

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations49
US12520546B2Jan 6, 2026

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations49
US12268022B2Apr 1, 2025

Semiconductor device including air gap regions below source/drain regions

SAMSUNG ELECTRONICS CO LTD0 citations49
US12019861B2Jun 25, 2024

Electronic apparatus and the method for controlling thereof

SAMSUNG ELECTRONICS CO LTD0 citations45

SAMSUNG DISPLAY CO LTD

5 patents

ENTEGRIS INC

3 patents

LG ELECTRONICS INC

2 patents

PCE TECH CO LTD

1 patent

MYONGJI UNIV INDUSTRY AND ACADEMIA COOPERATION FOUNDATION

1 patent