Inventor
LEE SEUNG HUN
KR229 patents
⚠️ This page may combine multiple inventors who share the name “LEE SEUNG HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
39 patentsUS5631871AMay 20, 1997
System for selecting one of a plurality of memory banks for use in an active cycle and all other banks for an inactive precharge cycle
SAMSUNG ELECTRONICS CO LTD84 citations97
US5590086ADec 31, 1996
Semiconductor memory having a plurality of I/O buses
SAMSUNG ELECTRONICS CO LTD92 citations97
US6343036B1Jan 29, 2002
Multi-bank dynamic random access memory devices having all bank precharge capability
SAMSUNG ELECTRONICS CO LTD41 citations96
US5838990ANov 17, 1998
Circuit in a semiconductor memory for programming operation modes of the memory
SAMSUNG ELECTRONICS CO LTD63 citations96
US5835956ANov 10, 1998
Synchronous dram having a plurality of latency modes
SAMSUNG ELECTRONICS CO LTD76 citations96
US5703828ADec 30, 1997
Semiconductor memory
SAMSUNG ELECTRONICS CO LTD52 citations96
US5446697AAug 29, 1995
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD52 citations96
US11362182B2Jun 14, 2022
Semiconductor device including superlattice pattern
SAMSUNG ELECTRONICS CO LTD14 citations93
US6298001B1Oct 2, 2001
Semiconductor memory device enabling direct current voltage test in package status
SAMSUNG ELECTRONICS CO LTD46 citations93
US5901190AMay 4, 1999
Digital delay locked loop circuit using synchronous delay line
SAMSUNG ELECTRONICS CO LTD43 citations93
US5742547AApr 21, 1998
Circuits for block redundancy repair of integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD23 citations93
US5646899AJul 8, 1997
Bit line sensing circuit of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD27 citations93
US5532578AJul 2, 1996
Reference voltage generator utilizing CMOS transistor
SAMSUNG ELECTRONICS CO LTD40 citations93
US5889719AMar 30, 1999
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD37 citations92
US9972701B2May 15, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations85
US11145720B2Oct 12, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations84
US10896957B2Jan 19, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD9 citations84
US10319863B2Jun 11, 2019
Semiconductor device having a varying thickness nanowire channel and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US10008575B2Jun 26, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US8008698B2Aug 30, 2011
Semiconductor memory devices having vertical channel transistors and related methods
SAMSUNG ELECTRONICS CO LTD11 citations84
US5862087AJan 19, 1999
Redundancy circuit for memory devices having high frequency addressing cycles
SAMSUNG ELECTRONICS CO LTD19 citations84
US10672764B2Jun 2, 2020
Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor
SAMSUNG ELECTRONICS CO LTD8 citations83
US10319841B2Jun 11, 2019
Integrated circuit device including asymmetrical fin field-effect transistor
SAMSUNG ELECTRONICS CO LTD7 citations83
US9354840B2May 31, 2016
Automatic detection method of video wall arrangement and video wall system using the same
SAMSUNG ELECTRONICS CO LTD11 citations83
US9074749B2Jul 7, 2015
Display apparatus
SAMSUNG ELECTRONICS CO LTD7 citations83
US10714387B2Jul 14, 2020
Integrated circuit devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations82
US10196738B2Feb 5, 2019
Deposition process monitoring system, and method of controlling deposition process and method of fabricating semiconductor device using the system
SAMSUNG ELECTRONICS CO LTD11 citations82
US5610869AMar 11, 1997
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD17 citations82
US11688778B2Jun 27, 2023
Semiconductor device including three-dimensional field-effect transistor with curved multi-layered source/drain pattern
SAMSUNG ELECTRONICS CO LTD4 citations74
US5598371AJan 28, 1997
Data input/output sensing circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD8 citations74
US12159911B2Dec 3, 2024
Semiconductor including active contact buried portions
SAMSUNG ELECTRONICS CO LTD2 citations73
US12027596B2Jul 2, 2024
Semiconductor device with source/drain pattern including buffer layer
SAMSUNG ELECTRONICS CO LTD2 citations73
US11631670B2Apr 18, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations73
US11171135B2Nov 9, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations73
US10693017B2Jun 23, 2020
Semiconductor device having a multi-thickness nanowire
SAMSUNG ELECTRONICS CO LTD3 citations73
US10312152B2Jun 4, 2019
Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10256237B2Apr 9, 2019
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US9608114B2Mar 28, 2017
Semiconductor device including field effect transistors
SAMSUNG ELECTRONICS CO LTD6 citations73
US11862679B2Jan 2, 2024
Semiconductor device having increased contact area between a source/drain pattern and an active contact
SAMSUNG ELECTRONICS CO LTD2 citations72
SAMSUNG DISPLAY CO LTD
2 patentsSK HYNIX INC
2 patents(unassigned)
1 patentPARK WON-MYUNG
1 patentLEE SEUNG-HUN
1 patentBR CONSULTING INC
1 patentLSIS CO LTD
1 patentIMEC VZW
1 patentSK INNOVATION CO LTD
1 patentShowing the top 50 of 229 patents by PatentIndex Score.