P

Inventor

LEE SEUNG HUN

KR229 patents
⚠️ This page may combine multiple inventors who share the name “LEE SEUNG HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

39 patents
US5631871AMay 20, 1997

System for selecting one of a plurality of memory banks for use in an active cycle and all other banks for an inactive precharge cycle

SAMSUNG ELECTRONICS CO LTD84 citations97
US5590086ADec 31, 1996

Semiconductor memory having a plurality of I/O buses

SAMSUNG ELECTRONICS CO LTD92 citations97
US6343036B1Jan 29, 2002

Multi-bank dynamic random access memory devices having all bank precharge capability

SAMSUNG ELECTRONICS CO LTD41 citations96
US5838990ANov 17, 1998

Circuit in a semiconductor memory for programming operation modes of the memory

SAMSUNG ELECTRONICS CO LTD63 citations96
US5835956ANov 10, 1998

Synchronous dram having a plurality of latency modes

SAMSUNG ELECTRONICS CO LTD76 citations96
US5703828ADec 30, 1997

Semiconductor memory

SAMSUNG ELECTRONICS CO LTD52 citations96
US5446697AAug 29, 1995

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD52 citations96
US11362182B2Jun 14, 2022

Semiconductor device including superlattice pattern

SAMSUNG ELECTRONICS CO LTD14 citations93
US6298001B1Oct 2, 2001

Semiconductor memory device enabling direct current voltage test in package status

SAMSUNG ELECTRONICS CO LTD46 citations93
US5901190AMay 4, 1999

Digital delay locked loop circuit using synchronous delay line

SAMSUNG ELECTRONICS CO LTD43 citations93
US5742547AApr 21, 1998

Circuits for block redundancy repair of integrated circuit memory devices

SAMSUNG ELECTRONICS CO LTD23 citations93
US5646899AJul 8, 1997

Bit line sensing circuit of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD27 citations93
US5532578AJul 2, 1996

Reference voltage generator utilizing CMOS transistor

SAMSUNG ELECTRONICS CO LTD40 citations93
US5889719AMar 30, 1999

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD37 citations92
US9972701B2May 15, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD18 citations85
US11145720B2Oct 12, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations84
US10896957B2Jan 19, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD9 citations84
US10319863B2Jun 11, 2019

Semiconductor device having a varying thickness nanowire channel and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US10008575B2Jun 26, 2018

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US8008698B2Aug 30, 2011

Semiconductor memory devices having vertical channel transistors and related methods

SAMSUNG ELECTRONICS CO LTD11 citations84
US5862087AJan 19, 1999

Redundancy circuit for memory devices having high frequency addressing cycles

SAMSUNG ELECTRONICS CO LTD19 citations84
US10672764B2Jun 2, 2020

Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor

SAMSUNG ELECTRONICS CO LTD8 citations83
US10319841B2Jun 11, 2019

Integrated circuit device including asymmetrical fin field-effect transistor

SAMSUNG ELECTRONICS CO LTD7 citations83
US9354840B2May 31, 2016

Automatic detection method of video wall arrangement and video wall system using the same

SAMSUNG ELECTRONICS CO LTD11 citations83
US9074749B2Jul 7, 2015

Display apparatus

SAMSUNG ELECTRONICS CO LTD7 citations83
US10714387B2Jul 14, 2020

Integrated circuit devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations82
US10196738B2Feb 5, 2019

Deposition process monitoring system, and method of controlling deposition process and method of fabricating semiconductor device using the system

SAMSUNG ELECTRONICS CO LTD11 citations82
US5610869AMar 11, 1997

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD17 citations82
US11688778B2Jun 27, 2023

Semiconductor device including three-dimensional field-effect transistor with curved multi-layered source/drain pattern

SAMSUNG ELECTRONICS CO LTD4 citations74
US5598371AJan 28, 1997

Data input/output sensing circuit of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD8 citations74
US12159911B2Dec 3, 2024

Semiconductor including active contact buried portions

SAMSUNG ELECTRONICS CO LTD2 citations73
US12027596B2Jul 2, 2024

Semiconductor device with source/drain pattern including buffer layer

SAMSUNG ELECTRONICS CO LTD2 citations73
US11631670B2Apr 18, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations73
US11171135B2Nov 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations73
US10693017B2Jun 23, 2020

Semiconductor device having a multi-thickness nanowire

SAMSUNG ELECTRONICS CO LTD3 citations73
US10312152B2Jun 4, 2019

Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10256237B2Apr 9, 2019

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US9608114B2Mar 28, 2017

Semiconductor device including field effect transistors

SAMSUNG ELECTRONICS CO LTD6 citations73
US11862679B2Jan 2, 2024

Semiconductor device having increased contact area between a source/drain pattern and an active contact

SAMSUNG ELECTRONICS CO LTD2 citations72

SAMSUNG DISPLAY CO LTD

2 patents

SK HYNIX INC

2 patents

(unassigned)

1 patent

PARK WON-MYUNG

1 patent

LEE SEUNG-HUN

1 patent

BR CONSULTING INC

1 patent

LSIS CO LTD

1 patent

IMEC VZW

1 patent

SK INNOVATION CO LTD

1 patent

Showing the top 50 of 229 patents by PatentIndex Score.