Inventor
YAN JIANG
US50 patents
⚠️ This page may combine multiple inventors who share the name “YAN JIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
16 patentsUS7298009B2Nov 20, 2007
Semiconductor method and device with mixed orientation substrate
INFINEON TECHNOLOGIES AG588 citations99
US7651915B2Jan 26, 2010
Strained semiconductor device and method of making same
INFINEON TECHNOLOGIES AG16 citations93
US6864151B2Mar 8, 2005
Method of forming shallow trench isolation using deep trench isolation
INFINEON TECHNOLOGIES AG54 citations93
US7495279B2Feb 24, 2009
Embedded flash memory devices on SOI substrates and methods of manufacture thereof
INFINEON TECHNOLOGIES AG14 citations92
US8031532B2Oct 4, 2011
Methods of operating embedded flash memory devices
INFINEON TECHNOLOGIES AG5 citations74
US7687347B2Mar 30, 2010
Embedded flash memory devices on SOI substrates and methods of manufacture thereof
INFINEON TECHNOLOGIES AG5 citations74
US7186622B2Mar 6, 2007
Formation of active area using semiconductor growth process without STI integration
INFINEON TECHNOLOGIES AG7 citations74
US7800182B2Sep 21, 2010
Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same
INFINEON TECHNOLOGIES AG6 citations73
US7985642B2Jul 26, 2011
Formation of active area using semiconductor growth process without STI integration
INFINEON TECHNOLOGIES AG1 citations63
US7786547B2Aug 31, 2010
Formation of active area using semiconductor growth process without STI integration
INFINEON TECHNOLOGIES AG1 citations63
US7678622B2Mar 16, 2010
Semiconductor method and device with mixed orientation substrate
INFINEON TECHNOLOGIES AG2 citations63
US9437593B2Sep 6, 2016
Silicided semiconductor structure and method of forming the same
INFINEON TECHNOLOGIES AG2 citations62
US10217812B2Feb 26, 2019
Silicon-on-insulator chip having multiple crystal orientations
INFINEON TECHNOLOGIES AG0 citations52
US9607986B2Mar 28, 2017
Mixed orientation semiconductor device and method
INFINEON TECHNOLOGIES AG0 citations52
US7947606B2May 24, 2011
Methods of forming conductive features and structures thereof
INFINEON TECHNOLOGIES AG0 citations52
US7820518B2Oct 26, 2010
Transistor fabrication methods and structures thereof
INFINEON TECHNOLOGIES AG0 citations52
YAN JIANG
8 patentsUS8173502B2May 8, 2012
Formation of active area using semiconductor growth process without STI integration
YAN JIANG122 citations98
US8530355B2Sep 10, 2013
Mixed orientation semiconductor device and method
YAN JIANG7 citations84
US8502299B2Aug 6, 2013
Strained semiconductor device and method of making same
YAN JIANG8 citations84
US8158478B2Apr 17, 2012
Strained semiconductor device and method of making same
YAN JIANG8 citations84
US9070744B2Jun 30, 2015
Shallow trench isolation structure, manufacturing method thereof and a device based on the structure
YAN JIANG6 citations73
US8759208B2Jun 24, 2014
Method for manufacturing contact holes in CMOS device using gate-last process
YAN JIANG5 citations73
USD976729SJan 31, 2023
Electronic scale
YAN JIANG0 citations62
US8865592B2Oct 21, 2014
Silicided semiconductor structure and method of forming the same
YAN JIANG0 citations50
IBM
5 patentsUS7482215B2Jan 27, 2009
Self-aligned dual segment liner and method of manufacturing the same
IBM20 citations92
US7517767B2Apr 14, 2009
Forming conductive stud for semiconductive devices
IBM6 citations74
US7393746B2Jul 1, 2008
Post-silicide spacer removal
IBM6 citations62
US7863693B2Jan 4, 2011
Forming conductive stud for semiconductive devices
IBM0 citations52
US7504309B2Mar 17, 2009
Pre-silicide spacer removal
IBM0 citations52
INST OF MICROELECTRONICS CAS
5 patentsUS9111863B2Aug 18, 2015
Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process
INST OF MICROELECTRONICS CAS2 citations62
US10096691B2Oct 9, 2018
Methods for forming metal silicide
INST OF MICROELECTRONICS CAS0 citations48
US9306003B2Apr 5, 2016
Semiconductor device and method for manufacturing the same
INST OF MICROELECTRONICS CAS0 citations48
US9831089B2Nov 28, 2017
Method for adjusting effective work function of metal gate
INST OF MICROELECTRONICS CAS0 citations47
US9331172B2May 3, 2016
Method for making HKMG dummy gate structure with amorphous/ONO masking structure and procedure
INST OF MICROELECTRONICS CAS0 citations37