P

Inventor

YAN JIANG

US50 patents
⚠️ This page may combine multiple inventors who share the name “YAN JIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

16 patents
US7298009B2Nov 20, 2007

Semiconductor method and device with mixed orientation substrate

INFINEON TECHNOLOGIES AG588 citations99
US7651915B2Jan 26, 2010

Strained semiconductor device and method of making same

INFINEON TECHNOLOGIES AG16 citations93
US6864151B2Mar 8, 2005

Method of forming shallow trench isolation using deep trench isolation

INFINEON TECHNOLOGIES AG54 citations93
US7495279B2Feb 24, 2009

Embedded flash memory devices on SOI substrates and methods of manufacture thereof

INFINEON TECHNOLOGIES AG14 citations92
US8031532B2Oct 4, 2011

Methods of operating embedded flash memory devices

INFINEON TECHNOLOGIES AG5 citations74
US7687347B2Mar 30, 2010

Embedded flash memory devices on SOI substrates and methods of manufacture thereof

INFINEON TECHNOLOGIES AG5 citations74
US7186622B2Mar 6, 2007

Formation of active area using semiconductor growth process without STI integration

INFINEON TECHNOLOGIES AG7 citations74
US7800182B2Sep 21, 2010

Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same

INFINEON TECHNOLOGIES AG6 citations73
US7985642B2Jul 26, 2011

Formation of active area using semiconductor growth process without STI integration

INFINEON TECHNOLOGIES AG1 citations63
US7786547B2Aug 31, 2010

Formation of active area using semiconductor growth process without STI integration

INFINEON TECHNOLOGIES AG1 citations63
US7678622B2Mar 16, 2010

Semiconductor method and device with mixed orientation substrate

INFINEON TECHNOLOGIES AG2 citations63
US9437593B2Sep 6, 2016

Silicided semiconductor structure and method of forming the same

INFINEON TECHNOLOGIES AG2 citations62
US10217812B2Feb 26, 2019

Silicon-on-insulator chip having multiple crystal orientations

INFINEON TECHNOLOGIES AG0 citations52
US9607986B2Mar 28, 2017

Mixed orientation semiconductor device and method

INFINEON TECHNOLOGIES AG0 citations52
US7947606B2May 24, 2011

Methods of forming conductive features and structures thereof

INFINEON TECHNOLOGIES AG0 citations52
US7820518B2Oct 26, 2010

Transistor fabrication methods and structures thereof

INFINEON TECHNOLOGIES AG0 citations52

YAN JIANG

8 patents

IBM

5 patents

INST OF MICROELECTRONICS CAS

5 patents

UNIV TEXAS

2 patents

YANG TAO

2 patents

HAN JIN-PING

2 patents

LI CHUNLONG

2 patents

TENCENT TECH SHENZHEN CO LTD

2 patents

TILKE ARMIN

1 patent

ZHONG HUICAI

1 patent

YIN HUAXIANG

1 patent

SZ DJI TECHNOLOGY CO LTD

1 patent

YANG HONG

1 patent

FU ZUOZHEN

1 patent