P

Inventor

MORE SHAHAJI B

TW198 patents

Patents

50 patents
US10510871B1Dec 17, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD357 citations99
US10164048B1Dec 25, 2018

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations93
US10510889B2Dec 17, 2019

P-type strained channel in a fin field effect transistor (FinFET) device

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US11329163B2May 10, 2022

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US10680106B2Jun 9, 2020

Method of forming source/drain epitaxial stacks

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations86
US11094826B2Aug 17, 2021

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10991826B2Apr 27, 2021

Semiconductor device and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10879126B2Dec 29, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10720530B2Jul 21, 2020

Semiconductor device and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10686074B2Jun 16, 2020

Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10651287B2May 12, 2020

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10535736B2Jan 14, 2020

Fully strained channel

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10468500B1Nov 5, 2019

FinFET fabrication methods

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10269646B2Apr 23, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10164100B2Dec 25, 2018

Formation method and structure semiconductor device with source/drain structures

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9847334B1Dec 19, 2017

Structure and formation method of semiconductor device with channel layer

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations84
US11948988B2Apr 2, 2024

Source/drain structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11557649B2Jan 17, 2023

Method of manufacturing semiconductor devices and semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12094779B2Sep 17, 2024

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12074166B2Aug 27, 2024

Epitaxy regions extending below STI regions and profiles thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11990377B2May 21, 2024

Asymmetric epitaxy regions for landing contact plug

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11972982B2Apr 30, 2024

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11973124B2Apr 30, 2024

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11942552B2Mar 26, 2024

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855211B2Dec 26, 2023

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11830772B2Nov 28, 2023

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11830912B2Nov 28, 2023

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11769817B2Sep 26, 2023

Method for forming source/drain contacts

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11688648B2Jun 27, 2023

Gate structure of a semiconductor device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11640983B2May 2, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11610890B2Mar 21, 2023

Epitaxy regions extending below STI regions and profiles thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11610979B2Mar 21, 2023

Profile control in forming epitaxy regions for transistors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11594638B2Feb 28, 2023

Epitaxial structures for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11569383B2Jan 31, 2023

Method of forming source/drain epitaxial stacks

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11532520B2Dec 20, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11522062B2Dec 6, 2022

Method of manufacturing an etch stop layer and an inter-layer dielectric on a source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11522086B2Dec 6, 2022

Semiconductor device and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11515215B2Nov 29, 2022

Asymmetric epitaxy regions for landing contact plug

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11515162B2Nov 29, 2022

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11508621B2Nov 22, 2022

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11476349B2Oct 18, 2022

FinFET structures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11469305B2Oct 11, 2022

Source/drain structure for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11430790B2Aug 30, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11404322B2Aug 2, 2022

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11404561B2Aug 2, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11342434B2May 24, 2022

Method of manufacturing semiconductor devices and semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11315834B2Apr 26, 2022

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11276766B2Mar 15, 2022

FinFET fabrication methods

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11251092B2Feb 15, 2022

Gate structure of a semiconductor device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11233123B2Jan 25, 2022

Fully strained channel

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

Showing the top 50 of 198 patents by PatentIndex Score.