Inventor

FAN CHUN-HSIANG

TW38 patents

⚠️ This page may combine multiple inventors who share the name “FAN CHUN-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FAN CHUN-HSIANG

TAIWAN SEMICONDUCTOR MFG CO LTD

Structure of S/D contact and method of making same

FinFET structures and methods of forming the same

Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same

Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure

Source and drain surface treatment for multi-gate field effect transistors

FETs and methods for forming the same

FETs and methods for forming the same

FinFETs with necking in the fins

Controlling fin-thinning through feedback

FETs and methods for forming the same

Controlling fin-thinning through feedback

Controlling fin-thinning through feedback

Structure of S/D contact and method of making same

Substrate vapor drying apparatus and method

Fin shape modification

Semiconductor device and method

Semiconductor device and method

Reducing fin wriggling in fin-thinning process

Method for cleaning semiconductor wafer

Source and drain surface treatment for multi-gate field effect transistors

Structure of S/D contact and method of making same

Method of forming a semiconductor device

Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same

FinFETs and methods for forming the same

Structures and methods for fabricating semiconductor devices using fin structures

Structures and methods for fabricating semiconductor devices using fin structures

Semiconductor wafer cleaning apparatus and method for cleaning semiconductor wafer

Semiconductor device structure with fin and method for forming the same

Semiconductor device and manufacturing method thereof

Sonic cleaning of brush

TAIWAN SEMICONDUCTOR MFG

FinFETs and methods for forming the same

FETs and methods for forming the same

Method of forming a germanium-containing FinFET

Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure

FinFETs and methods for forming the same

Semiconductor device and method for forming the same

Method of fabricating a semiconductor device having a capping layer

CHENG CHIEN-HONG

6H-indolo[2,3-b]quinoxaline derivatives and organic light emitting diode using the same