Inventor
JUNG JU HWAN
KR53 patents
⚠️ This page may combine multiple inventors who share the name “JUNG JU HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS7141999B2Nov 28, 2006
Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe
SAMSUNG ELECTRONICS CO LTD15 citations92
US7338831B2Mar 4, 2008
Method of fabricating semiconductor probe with resistive tip
SAMSUNG ELECTRONICS CO LTD11 citations84
US7406020B2Jul 29, 2008
Method of writing data on a storage device using a probe technique
SAMSUNG ELECTRONICS CO LTD13 citations83
US7319224B2Jan 15, 2008
Semiconductor probe with resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations83
US7142077B2Nov 28, 2006
Two-axis actuator with large stage
SAMSUNG ELECTRONICS CO LTD11 citations82
US7316072B2Jan 8, 2008
XY stage module, storage system employing the same and method for fabricating the XY stage module
SAMSUNG ELECTRONICS CO LTD8 citations74
US7170843B2Jan 30, 2007
High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus
SAMSUNG ELECTRONICS CO LTD8 citations74
US7008811B2Mar 7, 2006
Method of fabricating probe for SPM having FET channel structure utilizing self-aligned fabrication
SAMSUNG ELECTRONICS CO LTD9 citations74
US9366635B2Jun 14, 2016
Optical biosensor and method of operating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US9406714B2Aug 2, 2016
Unit pixel with photodiode under gate of sensing transistor and image pixel array including the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US7247968B2Jul 24, 2007
Two-axis micro-actuator with multidimensional actuation with large area stage
SAMSUNG ELECTRONICS CO LTD8 citations71
US7911928B2Mar 22, 2011
High density data storage device and data recording or reproduction method using the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7759954B2Jul 20, 2010
Semiconductor probe having resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7671616B2Mar 2, 2010
Semiconductor probe having embossed resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7659562B2Feb 9, 2010
Electric field read/write head and method of manufacturing same and data read/write device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7479212B2Jan 20, 2009
Method of manufacturing high-density data storage medium
SAMSUNG ELECTRONICS CO LTD2 citations63
US7464584B2Dec 16, 2008
Semiconductor probe and method of writing and reading information using the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7442571B2Oct 28, 2008
Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe
SAMSUNG ELECTRONICS CO LTD2 citations63
US7411210B2Aug 12, 2008
Semiconductor probe with resistive tip having metal shield thereon
SAMSUNG ELECTRONICS CO LTD5 citations63
US7808025B2Oct 5, 2010
Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head
SAMSUNG ELECTRONICS CO LTD2 citations62
US7889628B2Feb 15, 2011
Ferroelectric recording medium and writing method for the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7888718B2Feb 15, 2011
Charge-dipole coupled information storage medium
SAMSUNG ELECTRONICS CO LTD0 citations52
US7885170B2Feb 8, 2011
Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7828981B2Nov 9, 2010
Semiconductor probe with high resolution resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7820311B2Oct 26, 2010
Ferroelectric recording medium and writing method for the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7605014B2Oct 20, 2009
Method of fabricating resistive probe having self-aligned metal shield
SAMSUNG ELECTRONICS CO LTD0 citations52
US7602202B2Oct 13, 2009
Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7529119B2May 5, 2009
Magnetic logic device and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7528371B2May 5, 2009
Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7885169B2Feb 8, 2011
Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7733761B2Jun 8, 2010
Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7687838B2Mar 30, 2010
Resistive memory device having array of probes and method of manufacturing the resistive memory device
SAMSUNG ELECTRONICS CO LTD1 citations51
US7440302B2Oct 21, 2008
Ferroelectric information storage device and method of writing/reading information
SAMSUNG ELECTRONICS CO LTD0 citations51
DB HITEK CO LTD
4 patentsUS11664473B2May 30, 2023
SPAD pixel structure and method of manufacturing same
DB HITEK CO LTD0 citations57
US12336306B2Jun 17, 2025
SPAD structure
DB HITEK CO LTD0 citations54
US12369411B2Jul 22, 2025
Indirect Time-of-Flight (ToF) pixel structure
DB HITEK CO LTD0 citations52
US12593522B2Mar 31, 2026
Backside illuminated image sensor and manufacturing method thereof
DB HITEK CO LTD0 citations51
JIN YOUNG GU
3 patentsUS9800814B2Oct 24, 2017
Image sensor, method of operating the same, and image processing system including the same
JIN YOUNG GU5 citations84
US9106858B2Aug 11, 2015
Image sensor, method of operating the same, and image processing system including the same
JIN YOUNG GU5 citations84
US9894301B2Feb 13, 2018
CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same
JIN YOUNG GU2 citations73
KO HYOUNG-SOO
3 patentsUS8107354B2Jan 31, 2012
Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head
KO HYOUNG-SOO0 citations49
US9103722B2Aug 11, 2015
Unit pixels, depth sensors and three-dimensional image sensors including the same
KO HYOUNG-SOO0 citations48
US8901498B2Dec 2, 2014
Unit pixels, depth sensors and three-dimensional image sensors including the same
KO HYOUNG-SOO0 citations48
JUNG JU-HWAN
2 patentsKIM SUN JUNG
1 patentKIM WON JOO
1 patentSEOUL NAT UNIV IND FOUNDATION
1 patentHONG SEUNG-BUM
1 patentPARK DOO CHEOL
1 patentShowing the top 50 of 53 patents by PatentIndex Score.