P

Inventor

JUNG JU HWAN

KR53 patents
⚠️ This page may combine multiple inventors who share the name “JUNG JU HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

33 patents
US7141999B2Nov 28, 2006

Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe

SAMSUNG ELECTRONICS CO LTD15 citations92
US7338831B2Mar 4, 2008

Method of fabricating semiconductor probe with resistive tip

SAMSUNG ELECTRONICS CO LTD11 citations84
US7406020B2Jul 29, 2008

Method of writing data on a storage device using a probe technique

SAMSUNG ELECTRONICS CO LTD13 citations83
US7319224B2Jan 15, 2008

Semiconductor probe with resistive tip and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD14 citations83
US7142077B2Nov 28, 2006

Two-axis actuator with large stage

SAMSUNG ELECTRONICS CO LTD11 citations82
US7316072B2Jan 8, 2008

XY stage module, storage system employing the same and method for fabricating the XY stage module

SAMSUNG ELECTRONICS CO LTD8 citations74
US7170843B2Jan 30, 2007

High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus

SAMSUNG ELECTRONICS CO LTD8 citations74
US7008811B2Mar 7, 2006

Method of fabricating probe for SPM having FET channel structure utilizing self-aligned fabrication

SAMSUNG ELECTRONICS CO LTD9 citations74
US9366635B2Jun 14, 2016

Optical biosensor and method of operating the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US9406714B2Aug 2, 2016

Unit pixel with photodiode under gate of sensing transistor and image pixel array including the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US7247968B2Jul 24, 2007

Two-axis micro-actuator with multidimensional actuation with large area stage

SAMSUNG ELECTRONICS CO LTD8 citations71
US7911928B2Mar 22, 2011

High density data storage device and data recording or reproduction method using the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7759954B2Jul 20, 2010

Semiconductor probe having resistive tip and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7671616B2Mar 2, 2010

Semiconductor probe having embossed resistive tip and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7659562B2Feb 9, 2010

Electric field read/write head and method of manufacturing same and data read/write device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7479212B2Jan 20, 2009

Method of manufacturing high-density data storage medium

SAMSUNG ELECTRONICS CO LTD2 citations63
US7464584B2Dec 16, 2008

Semiconductor probe and method of writing and reading information using the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7442571B2Oct 28, 2008

Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe

SAMSUNG ELECTRONICS CO LTD2 citations63
US7411210B2Aug 12, 2008

Semiconductor probe with resistive tip having metal shield thereon

SAMSUNG ELECTRONICS CO LTD5 citations63
US7808025B2Oct 5, 2010

Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head

SAMSUNG ELECTRONICS CO LTD2 citations62
US7889628B2Feb 15, 2011

Ferroelectric recording medium and writing method for the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7888718B2Feb 15, 2011

Charge-dipole coupled information storage medium

SAMSUNG ELECTRONICS CO LTD0 citations52
US7885170B2Feb 8, 2011

Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7828981B2Nov 9, 2010

Semiconductor probe with high resolution resistive tip and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7820311B2Oct 26, 2010

Ferroelectric recording medium and writing method for the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7605014B2Oct 20, 2009

Method of fabricating resistive probe having self-aligned metal shield

SAMSUNG ELECTRONICS CO LTD0 citations52
US7602202B2Oct 13, 2009

Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7529119B2May 5, 2009

Magnetic logic device and methods of manufacturing and operating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7528371B2May 5, 2009

Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7885169B2Feb 8, 2011

Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7733761B2Jun 8, 2010

Ferroelectric recording medium comprising anisotropic conduction layer, recording apparatus comprising the same, and recording method of the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7687838B2Mar 30, 2010

Resistive memory device having array of probes and method of manufacturing the resistive memory device

SAMSUNG ELECTRONICS CO LTD1 citations51
US7440302B2Oct 21, 2008

Ferroelectric information storage device and method of writing/reading information

SAMSUNG ELECTRONICS CO LTD0 citations51

DB HITEK CO LTD

4 patents

JIN YOUNG GU

3 patents

KO HYOUNG-SOO

3 patents

JUNG JU-HWAN

2 patents

KIM SUN JUNG

1 patent

KIM WON JOO

1 patent

SEOUL NAT UNIV IND FOUNDATION

1 patent

HONG SEUNG-BUM

1 patent

PARK DOO CHEOL

1 patent

Showing the top 50 of 53 patents by PatentIndex Score.