Inventor
CIAVATTI JEROME
US35 patents
⚠️ This page may combine multiple inventors who share the name “CIAVATTI JEROME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
30 patentsUS10163635B1Dec 25, 2018
Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related method
GLOBALFOUNDRIES INC26 citations94
US10134739B1Nov 20, 2018
Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory array
GLOBALFOUNDRIES INC21 citations93
US10211206B1Feb 19, 2019
Two-port vertical SRAM circuit structure and method for producing the same
GLOBALFOUNDRIES INC17 citations86
US10164006B1Dec 25, 2018
LDMOS FinFET structures with trench isolation in the drain extension
GLOBALFOUNDRIES INC17 citations86
US10373877B1Aug 6, 2019
Methods of forming source/drain contact structures on integrated circuit products
GLOBALFOUNDRIES INC18 citations85
US10163915B1Dec 25, 2018
Vertical SRAM structure
GLOBALFOUNDRIES INC11 citations84
US10121878B1Nov 6, 2018
LDMOS finFET structures with multiple gate structures
GLOBALFOUNDRIES INC7 citations84
US9773781B1Sep 26, 2017
Resistor and capacitor disposed directly upon a SAC cap of a gate structure of a semiconductor structure
GLOBALFOUNDRIES INC8 citations84
US9543298B1Jan 10, 2017
Single diffusion break structure and cuts later method of making
GLOBALFOUNDRIES INC14 citations84
US9536991B1Jan 3, 2017
Single diffusion break structure
GLOBALFOUNDRIES INC19 citations84
US9324827B1Apr 26, 2016
Non-planar schottky diode and method of fabrication
GLOBALFOUNDRIES INC13 citations84
US10475890B2Nov 12, 2019
Scaled memory structures or other logic devices with middle of the line cuts
GLOBALFOUNDRIES INC2 citations73
US10290712B1May 14, 2019
LDMOS finFET structures with shallow trench isolation inside the fin
GLOBALFOUNDRIES INC3 citations73
US10068902B1Sep 4, 2018
Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method
GLOBALFOUNDRIES INC4 citations73
US9876010B1Jan 23, 2018
Resistor disposed directly upon a sac cap of a gate structure of a semiconductor structure
GLOBALFOUNDRIES INC6 citations73
US10026740B1Jul 17, 2018
DRAM structure with a single diffusion break
GLOBALFOUNDRIES INC3 citations72
US9064868B2Jun 23, 2015
Advanced faraday shield for a semiconductor device
GLOBALFOUNDRIES INC4 citations69
US10593754B2Mar 17, 2020
SOI device structures with doped regions providing charge sinking
GLOBALFOUNDRIES INC1 citations62
US10418365B2Sep 17, 2019
Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory array
GLOBALFOUNDRIES INC1 citations62
US10410929B2Sep 10, 2019
Multiple gate length device with self-aligned top junction
GLOBALFOUNDRIES INC1 citations62
US8962441B2Feb 24, 2015
Transistor device with improved source/drain junction architecture and methods of making such a device
GLOBALFOUNDRIES INC2 citations62
US8975130B2Mar 10, 2015
Methods of forming bipolar devices and an integrated circuit product containing such bipolar devices
GLOBALFOUNDRIES INC2 citations61
US9397191B2Jul 19, 2016
Methods of making a self-aligned channel drift device
GLOBALFOUNDRIES INC0 citations52
US9202911B2Dec 1, 2015
Self-aligned channel drift device and methods of making such a device
GLOBALFOUNDRIES INC0 citations52
US10636894B2Apr 28, 2020
Fin-type transistors with spacers on the gates
GLOBALFOUNDRIES INC0 citations51
US9601578B2Mar 21, 2017
Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS)
GLOBALFOUNDRIES INC0 citations51
US9178053B2Nov 3, 2015
Transistor device with improved source/drain junction architecture and methods of making such a device
GLOBALFOUNDRIES INC0 citations51
US9087706B2Jul 21, 2015
Methods of forming bipolar devices and an integrated circuit product containing such bipolar devices
GLOBALFOUNDRIES INC0 citations50
US9666709B2May 30, 2017
Non-planar semiconductor structure with preserved isolation region
GLOBALFOUNDRIES INC0 citations49
US10644149B1May 5, 2020
LDMOS fin-type field-effect transistors including a dummy gate
GLOBALFOUNDRIES INC0 citations42