Inventor
WANG HSIANG-YI
TW12 patents
⚠️ This page may combine multiple inventors who share the name “WANG HSIANG-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
5 patentsUS7947588B2May 24, 2011
Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode
TAIWAN SEMICONDUCTOR MFG16 citations84
US7745890B2Jun 29, 2010
Hybrid metal fully silicided (FUSI) gate
TAIWAN SEMICONDUCTOR MFG11 citations84
US8575725B2Nov 5, 2013
Through-silicon vias for semicondcutor substrate and method of manufacture
TAIWAN SEMICONDUCTOR MFG1 citations62
US7977772B2Jul 12, 2011
Hybrid metal fully silicided (FUSI) gate
TAIWAN SEMICONDUCTOR MFG0 citations52
US7799628B2Sep 21, 2010
Advanced metal gate method and device
TAIWAN SEMICONDUCTOR MFG1 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
4 patentsUS10784162B2Sep 22, 2020
Method of making a semiconductor component having through-silicon vias
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11545392B2Jan 3, 2023
Semiconductor component having through-silicon vias
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10115634B2Oct 30, 2018
Semiconductor component having through-silicon vias and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9418923B2Aug 16, 2016
Semiconductor component having through-silicon vias and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62