Inventor
WANG HUNG-CHO
TW80 patents
Patents
50 patentsUS10522740B2Dec 31, 2019
Techniques for MRAM MTJ top electrode to metal layer interface including spacer
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US10790439B2Sep 29, 2020
Memory cell with top electrode via
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US10038137B2Jul 31, 2018
MRAM device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD50 citations93
US9780301B1Oct 3, 2017
Method for manufacturing mixed-dimension and void-free MRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations92
US10797230B2Oct 6, 2020
Techniques for MRAM MTJ top electrode to metal layer interface including spacer
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10727274B2Jul 28, 2020
Techniques for MRAM top electrode via connection
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10504958B2Dec 10, 2019
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10497861B2Dec 3, 2019
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10164169B2Dec 25, 2018
Memory device having a single bottom electrode layer
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9842986B2Dec 12, 2017
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9666790B2May 30, 2017
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US11075335B2Jul 27, 2021
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10727272B2Jul 28, 2020
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10109790B2Oct 23, 2018
Method for manufacturing mixed-dimension and void-free MRAM structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11355696B2Jun 7, 2022
Magnetic tunnel junction structures and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11551736B2Jan 10, 2023
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11818962B2Nov 14, 2023
Sidewall spacer structure for memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11653572B2May 16, 2023
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11437433B2Sep 6, 2022
Techniques for MRAM top electrode via connection
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11322543B2May 3, 2022
Method for MRAM top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11189659B2Nov 30, 2021
Techniques for MRAM MTJ top electrode to via interface
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11121308B2Sep 14, 2021
Sidewall spacer structure for memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11043531B2Jun 22, 2021
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11005032B2May 11, 2021
Techniques for MRAM MTJ top electrode to metal layer interface including spacer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10937957B2Mar 2, 2021
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10686125B2Jun 16, 2020
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10636961B2Apr 28, 2020
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10270026B2Apr 23, 2019
Multilayered spacer structure for a magnetic tunneling junction and method of manufacturing
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10134807B2Nov 20, 2018
Structure and formation method of integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11889769B2Jan 30, 2024
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11785862B2Oct 10, 2023
Via landing enhancement for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11659775B2May 23, 2023
Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11469372B2Oct 11, 2022
Memory cell with top electrode via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11063208B2Jul 13, 2021
Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11031543B2Jun 8, 2021
Via landing enhancement for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11856868B2Dec 26, 2023
Magnetic tunnel junction structures and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11569443B2Jan 31, 2023
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10957847B2Mar 23, 2021
Multilayered spacer structure for a magnetic tunneling junction and method of manufacturing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12581864B2Mar 17, 2026
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12563975B2Feb 24, 2026
Magnetic memory device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12550619B2Feb 10, 2026
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12543506B2Feb 3, 2026
Memory device and fabrication method thereof
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US12520731B2Jan 6, 2026
Memory device
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US12444650B2Oct 14, 2025
Etch stop layer for memory device formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426274B2Sep 23, 2025
Method for MRAM top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426260B2Sep 23, 2025
Memory device with one-time programmable memory unit and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426514B2Sep 23, 2025
Techniques for MRAM MTJ top electrode connection
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US12342730B2Jun 24, 2025
Magnetic tunnel junction structures with protection outer layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12329039B2Jun 10, 2025
Magnetic tunnel junction structures with protection outer layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12284814B2Apr 22, 2025
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
Showing the top 50 of 80 patents by PatentIndex Score.