P

Inventor

LIN CHENG-TUNG

TW67 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHENG-TUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

24 patents
US9899258B1Feb 20, 2018

Metal liner overhang reduction and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD20 citations93
US10505014B2Dec 10, 2019

Vertical device having a protrusion source

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10157995B2Dec 18, 2018

Integrating junction formation of transistors with contact formation

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9853102B2Dec 26, 2017

Tunnel field-effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10535748B2Jan 14, 2020

Method of forming a contact with a silicide region

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11916131B2Feb 27, 2024

Vertical device having a protrusion source

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10854728B2Dec 1, 2020

Vertical device having a protrusion structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10026658B2Jul 17, 2018

Methods for fabricating vertical-gate-all-around transistor structures

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9966448B2May 8, 2018

Method of making a silicide beneath a vertical structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9805968B2Oct 31, 2017

Vertical structure having an etch stop over portion of the source

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9624576B2Apr 18, 2017

Systems and methods for gap filling improvement

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9478631B2Oct 25, 2016

Vertical-gate-all-around devices and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10658234B2May 19, 2020

Formation method of interconnection structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12349435B2Jul 1, 2025

Vertical device having a protrusion source

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12328890B2Jun 10, 2025

Contact with a silicide region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444028B2Sep 13, 2022

Contact structure and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022

Contact with a silicide region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11227788B2Jan 18, 2022

Method of forming isolation layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056486B2Jul 6, 2021

Semiconductor device with multiple threshold voltage and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10707114B2Jul 7, 2020

Method of forming isolation layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10418271B2Sep 17, 2019

Method of forming isolation layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10325994B2Jun 18, 2019

Semiconductor device and method of forming vertical structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10283359B2May 7, 2019

Systems and methods for gap filling improvement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276562B2Apr 30, 2019

Semiconductor device with multiple threshold voltage and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

15 patents
US9224833B2Dec 29, 2015

Method of forming a vertical device

TAIWAN SEMICONDUCTOR MFG33 citations98
US6042999AMar 28, 2000

Robust dual damascene process

TAIWAN SEMICONDUCTOR MFG120 citations98
US7396767B2Jul 8, 2008

Semiconductor structure including silicide regions and method of making same

TAIWAN SEMICONDUCTOR MFG33 citations93
US7015126B2Mar 21, 2006

Method of forming silicided gate structure

TAIWAN SEMICONDUCTOR MFG28 citations93
US6365325B1Apr 2, 2002

Aperture width reduction method for forming a patterned photoresist layer

TAIWAN SEMICONDUCTOR MFG29 citations92
US9318447B2Apr 19, 2016

Semiconductor device and method of forming vertical structure

TAIWAN SEMICONDUCTOR MFG6 citations84
US7947588B2May 24, 2011

Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode

TAIWAN SEMICONDUCTOR MFG16 citations84
US7745890B2Jun 29, 2010

Hybrid metal fully silicided (FUSI) gate

TAIWAN SEMICONDUCTOR MFG11 citations84
US9287170B2Mar 15, 2016

Contact structure and formation thereof

TAIWAN SEMICONDUCTOR MFG8 citations83
US9048087B2Jun 2, 2015

Methods for wet clean of oxide layers over epitaxial layers

TAIWAN SEMICONDUCTOR MFG8 citations83
US7625801B2Dec 1, 2009

Silicide formation with a pre-amorphous implant

TAIWAN SEMICONDUCTOR MFG7 citations74
US8927418B1Jan 6, 2015

Systems and methods for reducing contact resistivity of semiconductor devices

TAIWAN SEMICONDUCTOR MFG5 citations73
US7892961B2Feb 22, 2011

Methods for forming MOS devices with metal-inserted polysilicon gate stack

TAIWAN SEMICONDUCTOR MFG2 citations63
US7629655B2Dec 8, 2009

Semiconductor device with multiple silicide regions

TAIWAN SEMICONDUCTOR MFG4 citations63
US7446042B2Nov 4, 2008

Method for silicide formation on semiconductor devices

TAIWAN SEMICONDUCTOR MFG4 citations61

(unassigned)

4 patents

NAT SCIENCE COUNCIL

2 patents

LIN CHENG-TUNG

2 patents

XU JEFF J

1 patent

LIU CHUNG-SHI

1 patent

YU CHEN-HUA

1 patent

Showing the top 50 of 67 patents by PatentIndex Score.