Inventor
LIN CHENG-TUNG
TW67 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHENG-TUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS9899258B1Feb 20, 2018
Metal liner overhang reduction and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations93
US10505014B2Dec 10, 2019
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10157995B2Dec 18, 2018
Integrating junction formation of transistors with contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9853102B2Dec 26, 2017
Tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10535748B2Jan 14, 2020
Method of forming a contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11916131B2Feb 27, 2024
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10854728B2Dec 1, 2020
Vertical device having a protrusion structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10026658B2Jul 17, 2018
Methods for fabricating vertical-gate-all-around transistor structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9966448B2May 8, 2018
Method of making a silicide beneath a vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9805968B2Oct 31, 2017
Vertical structure having an etch stop over portion of the source
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9624576B2Apr 18, 2017
Systems and methods for gap filling improvement
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9478631B2Oct 25, 2016
Vertical-gate-all-around devices and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10658234B2May 19, 2020
Formation method of interconnection structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12349435B2Jul 1, 2025
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12328890B2Jun 10, 2025
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444028B2Sep 13, 2022
Contact structure and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11227788B2Jan 18, 2022
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056486B2Jul 6, 2021
Semiconductor device with multiple threshold voltage and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10707114B2Jul 7, 2020
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10418271B2Sep 17, 2019
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10325994B2Jun 18, 2019
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10283359B2May 7, 2019
Systems and methods for gap filling improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276562B2Apr 30, 2019
Semiconductor device with multiple threshold voltage and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
15 patentsUS9224833B2Dec 29, 2015
Method of forming a vertical device
TAIWAN SEMICONDUCTOR MFG33 citations98
US6042999AMar 28, 2000
Robust dual damascene process
TAIWAN SEMICONDUCTOR MFG120 citations98
US7396767B2Jul 8, 2008
Semiconductor structure including silicide regions and method of making same
TAIWAN SEMICONDUCTOR MFG33 citations93
US7015126B2Mar 21, 2006
Method of forming silicided gate structure
TAIWAN SEMICONDUCTOR MFG28 citations93
US6365325B1Apr 2, 2002
Aperture width reduction method for forming a patterned photoresist layer
TAIWAN SEMICONDUCTOR MFG29 citations92
US9318447B2Apr 19, 2016
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG6 citations84
US7947588B2May 24, 2011
Structure and method for a CMOS device with doped conducting metal oxide as the gate electrode
TAIWAN SEMICONDUCTOR MFG16 citations84
US7745890B2Jun 29, 2010
Hybrid metal fully silicided (FUSI) gate
TAIWAN SEMICONDUCTOR MFG11 citations84
US9287170B2Mar 15, 2016
Contact structure and formation thereof
TAIWAN SEMICONDUCTOR MFG8 citations83
US9048087B2Jun 2, 2015
Methods for wet clean of oxide layers over epitaxial layers
TAIWAN SEMICONDUCTOR MFG8 citations83
US7625801B2Dec 1, 2009
Silicide formation with a pre-amorphous implant
TAIWAN SEMICONDUCTOR MFG7 citations74
US8927418B1Jan 6, 2015
Systems and methods for reducing contact resistivity of semiconductor devices
TAIWAN SEMICONDUCTOR MFG5 citations73
US7892961B2Feb 22, 2011
Methods for forming MOS devices with metal-inserted polysilicon gate stack
TAIWAN SEMICONDUCTOR MFG2 citations63
US7629655B2Dec 8, 2009
Semiconductor device with multiple silicide regions
TAIWAN SEMICONDUCTOR MFG4 citations63
US7446042B2Nov 4, 2008
Method for silicide formation on semiconductor devices
TAIWAN SEMICONDUCTOR MFG4 citations61
(unassigned)
4 patentsNAT SCIENCE COUNCIL
2 patentsUS5536676AJul 16, 1996
Low temperature formation of silicided shallow junctions by ion implantation into thin silicon films
NAT SCIENCE COUNCIL30 citations90
US5624867AApr 29, 1997
Low temperature formation of palladium silicided shallow junctions using implant through metal/silicide technology
NAT SCIENCE COUNCIL17 citations72
LIN CHENG-TUNG
2 patentsXU JEFF J
1 patentLIU CHUNG-SHI
1 patentYU CHEN-HUA
1 patentShowing the top 50 of 67 patents by PatentIndex Score.