Inventor
KOBAYASHI KENYA
JP62 patents
⚠️ This page may combine multiple inventors who share the name “KOBAYASHI KENYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
22 patentsUS9954055B2Apr 24, 2018
Vertical power MOSFET device
TOSHIBA KK7 citations84
US9525059B1Dec 20, 2016
Semiconductor device with graded drift region
TOSHIBA KK18 citations84
US9716009B2Jul 25, 2017
Power semiconductor device with electrode having trench structure
TOSHIBA KK10 citations83
US9947751B2Apr 17, 2018
Semiconductor device and method of manufacturing the same
TOSHIBA KK6 citations82
US11695043B2Jul 4, 2023
Semiconductor device and method for manufacturing the same
TOSHIBA KK2 citations73
US11362210B2Jun 14, 2022
Semiconductor device
TOSHIBA KK2 citations73
US11239231B2Feb 1, 2022
Semiconductor device
TOSHIBA KK2 citations73
US11239357B2Feb 1, 2022
Semiconductor device
TOSHIBA KK4 citations73
US10340346B2Jul 2, 2019
Semiconductor device
TOSHIBA KK2 citations73
US9536959B2Jan 3, 2017
Power semiconductor device having field plate electrode
TOSHIBA KK3 citations73
US11127854B2Sep 21, 2021
Semiconductor device and method of manufacturing same
TOSHIBA KK4 citations72
US10840368B2Nov 17, 2020
Semiconductor device
TOSHIBA KK3 citations72
US10319850B2Jun 11, 2019
Semiconductor device and manufacturing method of semiconductor device
TOSHIBA KK4 citations72
US10453957B2Oct 22, 2019
Semiconductor device
TOSHIBA KK4 citations71
US11791408B2Oct 17, 2023
Semiconductor device
TOSHIBA KK0 citations63
US11715793B2Aug 1, 2023
Semiconductor device and method of manufacturing same
TOSHIBA KK0 citations62
US11705447B2Jul 18, 2023
Semiconductor device
TOSHIBA KK0 citations62
US11011609B2May 18, 2021
Method of manufacturing a semiconductor device
TOSHIBA KK0 citations61
US11177381B2Nov 16, 2021
Semiconductor device and method for manufacturing same
TOSHIBA KK0 citations52
US9871131B2Jan 16, 2018
Semiconductor device with insulating section of varying thickness
TOSHIBA KK1 citations52
US9853023B2Dec 26, 2017
Semiconductor device and semiconductor package
TOSHIBA KK0 citations52
US9570439B2Feb 14, 2017
Semiconductor device and semiconductor package
TOSHIBA KK0 citations52
NEC CORP
11 patentsUS6313508B1Nov 6, 2001
Semiconductor device of high-voltage CMOS structure and method of fabricating same
NEC CORP43 citations93
US5909626AJun 1, 1999
SOI substrate and fabrication process therefor
NEC CORP21 citations93
US5736779AApr 7, 1998
Semiconductor device with Zener diode for gate protection, and method for fabricating the same
NEC CORP42 citations93
US5476809ADec 19, 1995
Semiconductor device and method of manufacturing the same
NEC CORP23 citations93
US6004406ADec 21, 1999
Silicon on insulating substrate
NEC CORP24 citations92
US6541314B2Apr 1, 2003
Semiconductor device with SOI structure and method of manufacturing the same
NEC CORP8 citations74
US6492683B2Dec 10, 2002
Semiconductor device with SOI structure and method of manufacturing the same
NEC CORP9 citations74
US6278156B1Aug 21, 2001
Dielectric separate type semiconductor device
NEC CORP13 citations74
US5858855AJan 12, 1999
Semiconductor substrate, process for production thereof, and semiconductor device
NEC CORP11 citations74
US5691231ANov 25, 1997
Method of manufacturing silicon on insulating substrate
NEC CORP13 citations74
US5573972ANov 12, 1996
Method for manufacturing a silicon bonded wafer
NEC CORP12 citations74
NEC ELECTRONICS CORP
10 patentsUS6888196B2May 3, 2005
Vertical MOSFET reduced in cell size and method of producing the same
NEC ELECTRONICS CORP54 citations93
US7332770B2Feb 19, 2008
Semiconductor device
NEC ELECTRONICS CORP13 citations84
US7750402B2Jul 6, 2010
Lateral planar type power semiconductor device including drain buried region immediately below drain region and its manufacturing method
NEC ELECTRONICS CORP2 citations63
US7705408B2Apr 27, 2010
Vertical field effect transistor
NEC ELECTRONICS CORP3 citations63
US7622351B2Nov 24, 2009
Method of manufacturing semiconductor device and semiconductor device
NEC ELECTRONICS CORP5 citations63
US7508030B2Mar 24, 2009
Semiconductor device with vertical MOSFET and method of manufacturing the same
NEC ELECTRONICS CORP2 citations63
US7704827B2Apr 27, 2010
Semiconductor device and method for manufacturing the same
NEC ELECTRONICS CORP1 citations61
US7666744B2Feb 23, 2010
Method of manufacturing a semiconductor device having a trench surrounding plural unit cells
NEC ELECTRONICS CORP0 citations52
US7645661B2Jan 12, 2010
Semiconductor device
NEC ELECTRONICS CORP1 citations52
US7521754B2Apr 21, 2009
Semiconductor cell array with unit cells having adjacently surrounding source and gate electrode
NEC ELECTRONICS CORP0 citations52
RENESAS ELECTRONICS CORP
4 patentsUS7893489B2Feb 22, 2011
Semiconductor device having vertical MOSFET
RENESAS ELECTRONICS CORP17 citations93
US8361865B2Jan 29, 2013
Method of manufacturing a semiconductor device having vertical MOSFET
RENESAS ELECTRONICS CORP4 citations63
US7947556B2May 24, 2011
Method of manufacturing semiconductor apparatus
RENESAS ELECTRONICS CORP2 citations61
US7956409B2Jun 7, 2011
Semiconductor device having trench gate structure
RENESAS ELECTRONICS CORP1 citations52
OHTANI KINYA
2 patentsUS8314460B2Nov 20, 2012
Vertical power MOSFET semiconductor apparatus having separate base regions and manufacturing method thereof
OHTANI KINYA4 citations60
US8222690B2Jul 17, 2012
Vertical power MOSFET semiconductor apparatus having separate base regions and manufacturing method thereof
OHTANI KINYA4 citations60
SUMIDA WATARU
1 patentShowing the top 50 of 62 patents by PatentIndex Score.