Inventor

HAUTALA JOHN J

US49 patents

⚠️ This page may combine multiple inventors who share the name “HAUTALA JOHN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAUTALA JOHN J

TEL EPION INC

Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products

Method for depositing films using gas cluster ion beam processing

Method for forming trench isolation using a gas cluster ion beam growth process

Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation

Material infusion in a trap layer structure using gas cluster ion beam processing

Method for directional deposition using a gas cluster ion beam

Method for treating non-planar structures using gas cluster ion beam processing

Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices

Method and system for directional growth using a gas cluster ion beam

Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture

Copper interconnect wiring and method of forming thereof

Copper interconnect wiring and method and apparatus for forming thereof

Formation of ultra-shallow junctions by gas-cluster ion irradiation

Method of forming capping structures on one or more material layer surfaces

Method to improve a copper/dielectric interface in semiconductor devices

Method for modifying a material layer using gas cluster ion beam processing

Surface profile adjustment using gas cluster ion beam processing

Method to alter silicide properties using GCIB treatment

Method to alter silicide properties using GCIB treatment

Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam

HAUTALA JOHN J

Method and system for tilting a substrate during gas cluster ion beam processing

Gas cluster ion beam etch profile control using beam divergence

Surface profile adjustment using gas cluster ion beam processing

Method for modifying a material layer using gas cluster ion beam processing

Ultra-thin film formation using gas cluster ion beam processing

Method for enhancing a substrate using gas cluster ion beam processing

Method for modifying an etch rate of a material layer using energetic charged particles

Method for preparing a light-emitting device using gas cluster ion beam processing

Method and system for growing a thin film using a gas cluster ion beam

TOKYO ELECTRON LTD

Thermal CVD of TaN films from tantalum halide precursors

PECVD of TaN films from tantalum halide precursors

Plasma treated thermal CVD of TaN films from tantalum halide precursors

Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers

CVD of integrated Ta and TaNx films from tantalum halide precursors

PECVD of Ta films from tanatalum halide precursors

CVD of tantalum and tantalum nitride films from tantalum halide precursors

VARIAN SEMICONDUCTOR EQUIPMENT

Technique for forming a FinFET device using selective ion implantation

Techniques for treating sidewalls of patterned structures using angled ion treatment

Techniques for patterning multilayer magnetic memory devices using ion implantation

Magnetic memory and method of fabrication

Magnetic memory and method of fabrication

Techniques to mitigate straggle damage to sensitive structures

EPION CORP

Method and apparatus for improved processing with a gas-cluster ion beam

GCIB processing of integrated circuit interconnect structures

GCIB processing to improve interconnection vias and improved interconnection via

RUSSELL NOEL

Method to alter silicide properties using GCIB treatment

Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices

Method to alter silicide properties using GCIB treatment

TEL EPION CORP

Dual damascene integration structure and method for forming improved dual damascene integration structure