Inventor
NIWA TAKAKI
JP18 patents
⚠️ This page may combine multiple inventors who share the name “NIWA TAKAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
11 patentsUS10636663B2Apr 28, 2020
Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region
TOYODA GOSEI KK2 citations72
US9905432B2Feb 27, 2018
Semiconductor device, method for manufacturing the same and power converter
TOYODA GOSEI KK2 citations72
US10332966B2Jun 25, 2019
Semiconductor device, method of manufacturing the same and power converter
TOYODA GOSEI KK1 citations62
US10332754B2Jun 25, 2019
Method of manufacturing nitride semiconductor device
TOYODA GOSEI KK1 citations62
US10510833B2Dec 17, 2019
Method for manufacturing semiconductor device
TOYODA GOSEI KK0 citations51
US10083918B2Sep 25, 2018
Manufacturing method of semiconductor device
TOYODA GOSEI KK0 citations51
US9852925B2Dec 26, 2017
Method of manufacturing semiconductor device
TOYODA GOSEI KK0 citations51
US10879376B2Dec 29, 2020
Method for manufacturing semiconductor device
TOYODA GOSEI KK0 citations41
US10777674B2Sep 15, 2020
Semiconductor device
TOYODA GOSEI KK0 citations41
US10026851B2Jul 17, 2018
MPS diode
TOYODA GOSEI KK0 citations41
US9704952B2Jul 11, 2017
Semiconductor device and method for manufacturing semiconductor device
TOYODA GOSEI KK0 citations40
NEC ELECTRONICS CORP
3 patentsNEC CORP
3 patentsUS6355947B1Mar 12, 2002
Heterojunction bipolar transistor with band gap graded emitter
NEC CORP15 citations83
US5959317ASep 28, 1999
High frequency hetero junction type field effect transistor using multilayer electron feed layer
NEC CORP14 citations72
US7038244B2May 2, 2006
Semiconductor device and method of manufacturing the same
NEC CORP2 citations61