Inventor

HORII HIDEKI

KR51 patents

⚠️ This page may combine multiple inventors who share the name “HORII HIDEKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HORII HIDEKI

SAMSUNG ELECTRONICS CO LTD

Phase changeable memory devices having multi-level data storage elements and methods of fabricating the same

Methods for forming phase changeable memory devices

Method of fabricating self-aligning stacked capacitor using electroplating method

Methods of forming integrated circuit capacitors having protected diffusion barrier metal layers therein

Phase change memory devices including memory cells having different phase change materials and related methods and systems

Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention

Method for forming capacitor of semiconductor memory device using electroplating method

Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory

Phase changeable memory cell array region and method of forming the same

Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method

Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereof

Resistance variable memory device and programming method thereof

Phase change memory device and method of fabricating the same

Phase changeable memory device structures

Laser reflowing of phase changeable memory element to close a void therein

System and method of determining pulse properties of semiconductor device

Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured

Semiconductor device and method of fabricating the same

Resistance variable memory device and operating method thereof

Variable resistance memory device and method of manufacturing the same

Reflowing of a phase changeable memory element to close voids therein

Phase changable memory device structures

Manufacturing method for capacitor having electrode formed by electroplating

Variable resistance memory devices

Memory device including a variable resistance material layer

Variable resistance memory devices

Variable resistance memory device and method of manufacturing the same

Method of manufacturing a phase change memory device

Phase change memory devices including carbon-containing adhesive pattern

Memory device

Phase changeable memory cell array region and method of forming the same

Methods of forming semiconductor devices using di-block polymer layers

Phase change memory device and method of forming the same

Method of forming semiconductor devices having threshold switching devices

Methods of manufacturing semiconductor device

Variable resistance memory device and method of manufacturing the same

Phase changeable structure and method of forming the same

Methods of forming semiconductor devices having threshold switching devices

Memory device

Semiconductor device and method of fabricating the same

Variable resistance memory device and method of forming the same

Semiconductor device including data storage material pattern

HORII HIDEKI

Methods for fabricating phase change memory devices

Probe card and test apparatus including the same

AHN DONG-HO

Non-volatile memory device including phase-change material

Non-volatile memory device including phase-change material

PARK JEONG-HEE

Method of forming resistance variable memory device

Method of manufacturing variable resistance memory device

PARK JEONGHEE

Variable resistance memory device and method of forming the same

BAE JUN-SOO

Multi-level phase change memory device, program method thereof, and method and system including the same