Inventor

RADENS CARL

US150 patents

⚠️ This page may combine multiple inventors who share the name “RADENS CARL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RADENS CARL

IBM

Integrated chip having SRAM, DRAM and flash memory and method for fabricating the same

Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same

Method for fabricating dual workfunction devices on a semiconductor substrate using counter-doping and gapfill

Structure and method of fabricating embedded vertical DRAM arrays with silicided bitline and polysilicon interconnect

Integrated circuit using damascene gate structure

Method of fabricating an integrated circuit of logic and memory using damascene gate structure

Self-aligned gate isolation with asymmetric cut placement

Multiple width nanosheet devices

High density planar magnetic domain wall memory apparatus

Structure for stochastic integrated circuit personalization

Method of forming high density planar magnetic domain wall memory

Deep trench capacitor with buried plate electrode and isolation collar

Electrical programmable metal resistor

Semiconductor device utilizing alignment marks for globally aligning the front and back sides of a semiconductor substrate

Flash memory structure having double celled elements and method for fabricating the same

Folded-bitline dual-port DRAM architecture system

Trench field shield in trench isolation

Structure and process for fabricating a 6F2 DRAM cell having vertical MOSFET and large trench capacitance

Intelligent wireless power charging system

Semiconductor integrated circuit devices having high-Q wafer back-side capacitors

SOI field effect transistor with a back gate for modulating a floating body

Method of fabricating a microelectromechanical system (MEMS) switch

Semiconductor integrated circuit devices having high-Q wafer back-side capacitors

Interconnect structures and methods of making thereof

Structure and method of fabricating a hinge type MEMS switch

Modified via bottom structure for reliability enhancement

Gate structure with independently tailored vertical doping profile

Methods and apparatus for providing an antifuse function

Embedded vertical DRAM arrays with silicided bitline and polysilicon interconnect

Gate structure with independently tailored vertical doping profile

Low resistance fill for deep trench capacitor

Electrically blowable fuse with reduced cross-sectional area

Semiconductor device with local connection

High density planar magnetic domain wall memory apparatus

Interconnect structures with encasing cap and methods of making thereof

Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain

Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same

Method and structure for forming slot via bitline for MRAM devices

GLOBALFOUNDRIES INC

Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts

Methods of forming vertical transistor devices with self-aligned replacement gate structures

Semiconductor structures with stacked non-planar field effect transistors and methods of forming the structures

ST MICROELECTRONICS INC

Recessed gate field effect transistor

Multilayer structure in an integrated circuit for damage prevention and detection and methods of creating the same

Modular fuses and antifuses for integrated circuits

INFINEON TECHNOLOGIES AG

Dynamic random access memory

Method for fabricating a trench capacitor

INFINEON TECHNOLOGIES CORP

Field-shield-trench isolation for gigabit DRAMs

Method for manufacturing memory cell with trench capacitor

SIEMENS AG

Buffer layer for improving control of layer thickness

ZHANG JOHN H

Recessed gate field effect transistor