Inventor
BETHOUX JEAN-MARC
FR19 patents
⚠️ This page may combine multiple inventors who share the name “BETHOUX JEAN-MARC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SOITEC SILICON ON INSULATOR
16 patentsUS9679777B2Jun 13, 2017
Process, stack and assembly for separating a structure from a substrate by electromagnetic radiation
SOITEC SILICON ON INSULATOR3 citations70
US12356858B2Jul 8, 2025
Method for the production of a single-crystal film, in particular piezoelectric
SOITEC SILICON ON INSULATOR0 citations62
US12087615B2Sep 10, 2024
Method for manufacturing a film on a support having a non-flat surface
SOITEC SILICON ON INSULATOR0 citations62
US12052921B2Jul 30, 2024
Method for manufacturing a film on a flexible sheet
SOITEC SILICON ON INSULATOR0 citations62
US11913134B2Feb 27, 2024
Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film
SOITEC SILICON ON INSULATOR0 citations62
US11600766B2Mar 7, 2023
Method for manufacturing a monocrystalline piezoelectric layer
SOITEC SILICON ON INSULATOR1 citations62
US11557715B2Jan 17, 2023
Method for manufacturing a film on a flexible sheet
SOITEC SILICON ON INSULATOR1 citations62
US11373897B2Jun 28, 2022
Method for manufacturing a film on a support having a non-flat surface
SOITEC SILICON ON INSULATOR0 citations62
US11101428B2Aug 24, 2021
Method for the production of a single-crystal film, in particular piezoeletric
SOITEC SILICON ON INSULATOR0 citations62
US11295950B2Apr 5, 2022
Structure comprising single-crystal semiconductor islands and process for making such a structure
SOITEC SILICON ON INSULATOR0 citations59
US11081521B2Aug 3, 2021
Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters
SOITEC SILICON ON INSULATOR0 citations50
US12040424B2Jul 16, 2024
Method for manufacturing a growth substrate
SOITEC SILICON ON INSULATOR0 citations45
US12033854B2Jul 9, 2024
Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on a carrier substrate of polycrystalline SiC
SOITEC SILICON ON INSULATOR0 citations45
US11469367B2Oct 11, 2022
Method for separating a removable composite structure by means of a light flux
SOITEC SILICON ON INSULATOR0 citations45
US11462676B2Oct 4, 2022
Method for adjusting the stress state of a piezoelectric film and acoustic wave device employing such a film
SOITEC SILICON ON INSULATOR0 citations45
US11171256B2Nov 9, 2021
Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters
SOITEC SILICON ON INSULATOR0 citations40