P

Inventor

BETHOUX JEAN-MARC

FR19 patents
⚠️ This page may combine multiple inventors who share the name “BETHOUX JEAN-MARC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SOITEC SILICON ON INSULATOR

16 patents
US9679777B2Jun 13, 2017

Process, stack and assembly for separating a structure from a substrate by electromagnetic radiation

SOITEC SILICON ON INSULATOR3 citations70
US12356858B2Jul 8, 2025

Method for the production of a single-crystal film, in particular piezoelectric

SOITEC SILICON ON INSULATOR0 citations62
US12087615B2Sep 10, 2024

Method for manufacturing a film on a support having a non-flat surface

SOITEC SILICON ON INSULATOR0 citations62
US12052921B2Jul 30, 2024

Method for manufacturing a film on a flexible sheet

SOITEC SILICON ON INSULATOR0 citations62
US11913134B2Feb 27, 2024

Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film

SOITEC SILICON ON INSULATOR0 citations62
US11600766B2Mar 7, 2023

Method for manufacturing a monocrystalline piezoelectric layer

SOITEC SILICON ON INSULATOR1 citations62
US11557715B2Jan 17, 2023

Method for manufacturing a film on a flexible sheet

SOITEC SILICON ON INSULATOR1 citations62
US11373897B2Jun 28, 2022

Method for manufacturing a film on a support having a non-flat surface

SOITEC SILICON ON INSULATOR0 citations62
US11101428B2Aug 24, 2021

Method for the production of a single-crystal film, in particular piezoeletric

SOITEC SILICON ON INSULATOR0 citations62
US11295950B2Apr 5, 2022

Structure comprising single-crystal semiconductor islands and process for making such a structure

SOITEC SILICON ON INSULATOR0 citations59
US11081521B2Aug 3, 2021

Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters

SOITEC SILICON ON INSULATOR0 citations50
US12040424B2Jul 16, 2024

Method for manufacturing a growth substrate

SOITEC SILICON ON INSULATOR0 citations45
US12033854B2Jul 9, 2024

Method for manufacturing a composite structure comprising a thin layer of monocrystalline SiC on a carrier substrate of polycrystalline SiC

SOITEC SILICON ON INSULATOR0 citations45
US11469367B2Oct 11, 2022

Method for separating a removable composite structure by means of a light flux

SOITEC SILICON ON INSULATOR0 citations45
US11462676B2Oct 4, 2022

Method for adjusting the stress state of a piezoelectric film and acoustic wave device employing such a film

SOITEC SILICON ON INSULATOR0 citations45
US11171256B2Nov 9, 2021

Process for manufacturing a plurality of crystalline semiconductor islands having a variety of lattice parameters

SOITEC SILICON ON INSULATOR0 citations40

BETHOUX JEAN-MARC

2 patents

LETERTRE FABRICE

1 patent