Inventor
ZHANG DU
US14 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG DU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
12 patentsUS11024508B2Jun 1, 2021
Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching
TOKYO ELECTRON LTD2 citations70
US12237172B2Feb 25, 2025
Etch process for oxide of alkaline earth metal
TOKYO ELECTRON LTD0 citations61
US11538692B2Dec 27, 2022
Cyclic plasma etching of carbon-containing materials
TOKYO ELECTRON LTD0 citations61
US12400863B2Aug 26, 2025
Method for etching for semiconductor fabrication
TOKYO ELECTRON LTD0 citations60
US12308212B2May 20, 2025
In-situ adsorbate formation for plasma etch process
TOKYO ELECTRON LTD0 citations60
US11152217B2Oct 19, 2021
Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride deposition
TOKYO ELECTRON LTD0 citations60
US11189499B2Nov 30, 2021
Atomic layer etch (ALE) of tungsten or other metal layers
TOKYO ELECTRON LTD0 citations59
US12131914B2Oct 29, 2024
Selective etching with fluorine, oxygen and noble gas containing plasmas
TOKYO ELECTRON LTD0 citations58
US12598932B2Apr 7, 2026
Methods and structures for improving etch profile of underlying layers
TOKYO ELECTRON LTD0 citations50
US12424447B2Sep 23, 2025
Method to selectively etch silicon nitride to silicon oxide using water crystallization
TOKYO ELECTRON LTD0 citations49
US11804380B2Oct 31, 2023
High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation
TOKYO ELECTRON LTD0 citations49
US11158517B2Oct 26, 2021
Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsing
TOKYO ELECTRON LTD0 citations49