Inventor
TSAI YU-HAO
US12 patents
Patents
12 patentsUS11024508B2Jun 1, 2021
Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching
TOKYO ELECTRON LTD2 citations70
US12400863B2Aug 26, 2025
Method for etching for semiconductor fabrication
TOKYO ELECTRON LTD0 citations60
US12308212B2May 20, 2025
In-situ adsorbate formation for plasma etch process
TOKYO ELECTRON LTD0 citations60
US12287578B2Apr 29, 2025
Cyclic method for reactive development of photoresists
TOKYO ELECTRON LTD0 citations60
US11152217B2Oct 19, 2021
Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride deposition
TOKYO ELECTRON LTD0 citations60
US11189499B2Nov 30, 2021
Atomic layer etch (ALE) of tungsten or other metal layers
TOKYO ELECTRON LTD0 citations59
US11837471B2Dec 5, 2023
Methods of patterning small features
TOKYO ELECTRON LTD1 citations57
US11232954B2Jan 25, 2022
Sidewall protection layer formation for substrate processing
TOKYO ELECTRON LTD0 citations50
US12424447B2Sep 23, 2025
Method to selectively etch silicon nitride to silicon oxide using water crystallization
TOKYO ELECTRON LTD0 citations49
US11804380B2Oct 31, 2023
High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation
TOKYO ELECTRON LTD0 citations49
US11158517B2Oct 26, 2021
Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsing
TOKYO ELECTRON LTD0 citations49
US12272558B2Apr 8, 2025
Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification
TOKYO ELECTRON LTD0 citations47