Inventor

WANG MINGMEI

US22 patents

⚠️ This page may combine multiple inventors who share the name “WANG MINGMEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG MINGMEI

TOKYO ELECTRON LTD

Methods for high precision etching of substrates

Methods for high precision plasma etching of substrates

Methods for high precision plasma etching of substrates

Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching

Method for atomic layer etching

Etch process for oxide of alkaline earth metal

Cyclic plasma etching of carbon-containing materials

Method for etching for semiconductor fabrication

In-situ adsorbate formation for plasma etch process

Highly selective silicon oxide/silicon nitride etching by selective boron nitride or aluminum nitride deposition

Atomic layer etch (ALE) of tungsten or other metal layers

Selective etching with fluorine, oxygen and noble gas containing plasmas

Plasma processing system and method using radio frequency and microwave power

Plasma processing system and method using radio frequency (RF) and microwave power

Methods of patterning small features

Sidewall protection layer formation for substrate processing

Method to selectively etch silicon nitride to silicon oxide using water crystallization

High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation

Selective plasma etching of silicon oxide relative to silicon nitride by gas pulsing

Method of in situ hard mask removal

HU XIANG

Interconnect formation using a sidewall mask layer

GLOBALFOUNDRIES INC

Feature etching using varying supply of power pulses