Inventor
STEWART DEREK
US24 patents
⚠️ This page may combine multiple inventors who share the name “STEWART DEREK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
13 patentsUS10700093B1Jun 30, 2020
Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same
SANDISK TECHNOLOGIES LLC42 citations97
US10788547B2Sep 29, 2020
Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof
SANDISK TECHNOLOGIES LLC24 citations94
US11417379B2Aug 16, 2022
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC7 citations85
US10290804B2May 14, 2019
Nanoparticle-based resistive memory device and methods for manufacturing the same
SANDISK TECHNOLOGIES LLC7 citations83
US11411170B2Aug 9, 2022
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC3 citations73
US11349066B2May 31, 2022
Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
SANDISK TECHNOLOGIES LLC3 citations73
US11271009B2Mar 8, 2022
Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same
SANDISK TECHNOLOGIES LLC2 citations73
US10388646B1Aug 20, 2019
Electrostatic discharge protection devices including a field-induced switching element
SANDISK TECHNOLOGIES LLC5 citations73
US10553647B2Feb 4, 2020
Methods and apparatus for three-dimensional non-volatile memory
SANDISK TECHNOLOGIES LLC5 citations72
US10355049B1Jul 16, 2019
Methods and apparatus for three-dimensional non-volatile memory
SANDISK TECHNOLOGIES LLC5 citations72
US12106790B2Oct 1, 2024
Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
SANDISK TECHNOLOGIES LLC0 citations58
US12592267B2Mar 31, 2026
Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy
SANDISK TECHNOLOGIES LLC0 citations52
US12211535B2Jan 28, 2025
Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
SANDISK TECHNOLOGIES LLC0 citations47
WESTERN DIGITAL TECH INC
9 patentsUS11217289B1Jan 4, 2022
Spinel containing magnetic tunnel junction and method of making the same
WESTERN DIGITAL TECH INC7 citations85
US11176981B1Nov 16, 2021
Spinel containing magnetic tunnel junction and method of making the same
WESTERN DIGITAL TECH INC7 citations83
US11889702B2Jan 30, 2024
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
WESTERN DIGITAL TECH INC3 citations74
US11871679B2Jan 9, 2024
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
WESTERN DIGITAL TECH INC3 citations74
US11839162B2Dec 5, 2023
Magnetoresistive memory device including a plurality of reference layers
WESTERN DIGITAL TECH INC3 citations73
US11031435B2Jun 8, 2021
Memory device containing ovonic threshold switch material thermal isolation and method of making the same
WESTERN DIGITAL TECH INC6 citations72
US11271040B1Mar 8, 2022
Memory device containing selector with current focusing layer and methods of making the same
WESTERN DIGITAL TECH INC2 citations71
US11887640B2Jan 30, 2024
Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
WESTERN DIGITAL TECH INC1 citations62
US11443790B2Sep 13, 2022
Spinel containing magnetic tunnel junction and method of making the same
WESTERN DIGITAL TECH INC0 citations61